BA6222 Rohm Semiconductor, BA6222 Datasheet - Page 9

• Manufacturer Part Number: BA6222
• Description: IC MOTOR DRVR REVERSIBLE HSIP10
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of BA6222

• Applications: Motor Driver
• Evaluation Tools: *
• Number Of Outputs: 1
• Current - Output: 2A
• Voltage - Load: 8 V ~ 18 V
• Voltage - Supply: 8 V ~ 18 V
• Operating Temperature: -25°C ~ 75°C
• Mounting Type: Through Hole
• Package / Case: 10-SIP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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11)
12)
Testing on application boards
When testing the IC on an application board, connecting a capacitor to a low impedance pin subjects the IC to stress.
Therefore, always discharge capacitors after each process or step. Always turn the IC's power supply off before
connecting it to or removing it from the test setup during the inspection process. Ground the IC during assembly steps
as an antistatic measure. Use similar precaution when transporting or storing the IC.
Regarding the input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by
which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.
Parasitic element
Pin A
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
N
P
+
N
GND
P
P substrate
P
+
N
Resistor
Pin A
Appendix: Example of monolithic IC structure
Parasitic
element
9/10
Parasitic element
Pin B
N
P
+
C
B
N
E
GND
P
P substrate
Transistor (NPN)
P
+
N
GND
Other adjacent elements
Pin B
B
Technical Note
2011.05 - Rev.B
C
E
GND
Parasitic
element