MT16HTF25664HZ-667H1 Micron Technology Inc, MT16HTF25664HZ-667H1 Datasheet

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MT16HTF25664HZ-667H1

Manufacturer Part Number
MT16HTF25664HZ-667H1
Description
MODULE DDR2 SDRAM 2GB 200SODIMM
Manufacturer
Micron Technology Inc
Series
-r

Specifications of MT16HTF25664HZ-667H1

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
667MT/s
Features
-
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
256Mx64
Total Density
2GByte
Chip Density
128Mb
Access Time (max)
900ns
Package Type
SODIMM
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.136A
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
DDR2 SDRAM SODIMM
MT16HTF12864HZ – 1GB
MT16HTF25664HZ – 2GB
MT16HTF51264HZ – 4GB
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 1GB (128 Meg x 64), 2GB (256 Meg x 64) or 4GB (512
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Halogen-free
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Table 1: Key Timing Parameters
PDF: 09005aef8339ef97
htf16c128_256_512x64hz.pdf - Rev. C 9/10 EN
(SODIMM)
PC2-5300, or PC2-6400
Meg x 64)
operation
Speed
Grade
-1GA
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DDQ
= 1.7–3.6V
Nomenclature
= 1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Industry
PC2-8500
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 7
1066
t
CK
1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
CL = 6
800
800
800
Data Rate (MT/s)
CL = 5
667
800
667
667
1
Figure 1: 200-Pin SODIMM (MO-224 R/C E)
Module Height: 30mm (1.181 in.)
Options
• Operating temperature
• Package
• Frequency/CL
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (halogen-free)
– 1.87ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
CL = 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
533
533
533
553
553
400
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
module offerings.
CL = 3
400
400
400
400
400
400
2
A
13.125
A
t
(ns)
12.5
RCD
≤ +85°C)
≤ +70°C)
15
15
15
15
© 2008 Micron Technology, Inc. All rights reserved.
1
13.125
(ns)
12.5
t
15
15
15
15
RP
Features
Marking
None
-1GA
-80E
-800
-667
58.125
(ns)
57.5
t
Z
I
60
60
55
55
RC

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MT16HTF25664HZ-667H1 Summary of contents

Page 1

... DDR2 SDRAM SODIMM MT16HTF12864HZ – 1GB MT16HTF25664HZ – 2GB MT16HTF51264HZ – 4GB Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB (128 Meg x 64), 2GB (256 Meg x 64) or 4GB (512 Meg x 64) • ...

Page 2

... The data sheet for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16HTF25664HZ-80EH1. PDF: 09005aef8339ef97 htf16c128_256_512x64hz.pdf - Rev. C 9/10 EN ...

Page 3

Pin Assignments Table 6: Pin Assignments 200-Pin DDR2 SODIMM Front Pin Symbol Pin Symbol Pin DQS2 101 REF 103 DQ0 55 DQ18 105 7 DQ1 57 DQ19 107 9 V ...

Page 4

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 5

Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef8339ef97 ...

Page 6

Functional Block Diagram – 1GB, 2GB Figure 2: Functional Block Diagram – 1GB, 2GB S1# S0# DQS0# DQS0 DM0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DQ8 DQ ...

Page 7

Functional Block Diagram – 4GB Figure 3: Functional Block Diagram – 4GB S1# S0# DQS0# DQS0 DM0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DQ8 DQ DQ9 DQ ...

Page 8

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 9

Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data ...

Page 10

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...

Page 11

IDD Specifications Table 10: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating one bank active-precharge ...

Page 12

Table 10: DDR2 I Specifications and Conditions – 1GB (Continued) DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating bank interleave read current: ...

Page 13

Table 11: DDR2 I Specifications and Conditions – 2GB (Die Revision E and G) (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet ...

Page 14

Table 12: DDR2 I Specifications and Conditions – 2GB (Die Revision H) (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Active ...

Page 15

Table 13: DDR2 I Specifications and Conditions – 4GB (Die Revision A) (Continued) DD Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com- ponent data sheet Parameter Precharge ...

Page 16

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 14: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 17

Module Dimensions – 1GB, 2GB Figure 4: 200-Pin DDR2 SODIMM – 1GB, 2GB 2.0 (0.079 (2X) 1.80 (0.071) (2X) U6 6.0 (0.236) TYP Pin 1 2.0 (0.079) TYP 16.25 (0.64) TYP U10 U15 3.5 (0.138) TYP Pin 200 ...

Page 18

Module Dimensions – 4GB Figure 5: 200-Pin DDR2 SODIMM – 4GB 2.0 (0.079 (2X) 1.80 (0.071) (2X) U7 6.0 (0.236) TYP PIN 1 2.0 (0.079) TYP 16.25 (0.64) TYP 45° 4X U11 U15 3.5 (0.138) TYP PIN 200 ...

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