MT18HTF25672PDZ-667H1 Micron Technology Inc, MT18HTF25672PDZ-667H1 Datasheet - Page 15

• Manufacturer Part Number: MT18HTF25672PDZ-667H1
• Description: MODULE DDR2 SDRAM 2GB 240RDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18HTF25672PDZ-667H1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Features: -
• Package / Case: 240-RDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 12: DDR2 I
Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
PDF: 09005aef83d3d893
htf18c128_256_512x72pdz.pdf - Rev. D 11/10 EN
Parameter
Active power-down current: All device banks open;
(I
Data bus inputs are floating
Active standby current: All device banks open;
(I
trol and address bus inputs are switching; Data bus inputs are switching
Operating burst write current: All device banks open; Continuous burst writes;
BL = 4, CL = CL (I
CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching;
Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst read,
I
=
are switching; Data bus inputs are switching
Burst refresh current:
val; CKE is HIGH, S# is HIGH between valid commands; Other control and address
bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address
bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving reads,
I
t
commands; Address bus inputs are stable during deselects; Data bus inputs are
switching
OUT
OUT
RC (I
DD
DD
t
RP (I
); CKE is LOW; Other control and address bus inputs are stable;
),
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, CL = CL (I
DD
t
RP =
DD
),
); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs
t
RRD =
t
RP (I
DD
DD
t
RRD (I
); CKE is HIGH, S# is HIGH between valid commands; Other con-
), AL = 0;
DD
Notes:
Specifications and Conditions – 4GB, Die Revision C (Continued)
DD
t
CK =
),
t
t
RCD =
DD
DD
CK =
t
1. Value calculated as one module rank in this operating condition. All other module ranks
2. Value calculated reflects all module ranks in this operating condition.
), AL = 0;
), AL =
CK (I
in I
t
CK (I
t
1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
RCD (I
DD
DD2P
); REFRESH command at every
t
RCD (I
DD
t
CK =
),
DD
(CKE LOW) mode.
t
); CKE is HIGH, S# is HIGH between valid
RAS =
DD
t
CK (I
) - 1 ×
t
CK =
t
RAS MAX (I
DD
t
),
CK (I
t
CK =
t
t
CK (I
RAS =
DD
15
t
DD
);
CK
DD
t
t
),
RAS MAX (I
CK =
),
t
RAS =
t
RP =
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
t
RFC (I
CK (I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
t
RAS MAX
RP (I
DD
DD
DD
),
) inter-
),
DD
t
RC =
t
RP
);
Symbol
I
I
I
I
DD4W
DD3N
I
I
I
DD3P
DD4R
DD5
DD6
DD7
2
2
1
2
2
2
2
© 2009 Micron Technology, Inc. All rights reserved.
I
-80E/
DD
-800
TBD
TBD
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Specifications
-667
TBD
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Units
mA
mA
mA
mA
mA
mA
mA