DG411DJ-E3 Vishay, DG411DJ-E3 Datasheet - Page 3

• Manufacturer Part Number: DG411DJ-E3
• Description: IC SWITCH QUAD SPST 16-DIP
• Manufacturer: Vishay

Specifications of DG411DJ-E3

• Function: Switch
• Circuit: 4 x SPST - NC
• On-state Resistance: 35 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 5 V ~ 44 V, ±5 V ~ 20 V
• Current - Supply: -1µA, 1&microA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Number Of Switches: Quad
• Switch Configuration: SPST
• On Resistance (max): 80 Ohms
• On Time (max): 250 ns
• Off Time (max): 145 ns
• Supply Voltage (max): 25 V
• Supply Current: 0.0000001 mA
• Maximum Power Dissipation: 470 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Analog Switch Type: SPST
• No. Of Channels: 4
• On State Resistance Max: 35ohm
• Turn Off Time: 100ns
• Turn On Time: 110ns
• Supply Voltage Range: ± 13.5V To ± 16.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 70050
S11-0179-Rev. F, 07-Feb-11
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Switch Off Leakage
Current
Channel On Leakage
Current
Digital Control
Input Current, V
Input Current, V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
Channel-to-Channel
Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel On
Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
e
e
e
IN
IN
Low
High
e
e
e
a
V
Symbol
R
ANALOG
C
C
C
OIRR
X
I
I
I
I
DS(on)
t
S(off)
D(off)
D(on)
t
GND
OFF
TALK
S(off)
D(off)
D(on)
I
I
ON
t
I+
Q
I
I-
IH
IL
D
L
V
V
I
D
V+ = 13.5 V, V- = - 13.5 V
S
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
V
L
V+ = 16.5, V- = - 16.5 V
R
R
DG413 only, V
=
V
V
S
V+ = 15 V, V- = - 15 V
= - 10 mA, V
R
= 5 V, V
L
L
V
IN
IN
±
=
V
Unless Specified
L
Test Conditions
= 300 , C
= 300 , C
S
g
= 50 C
±
15.5 V, V
under test = 0.8 V
under test = 2.4 V
V
= V
= 0 V, R
C
IN
10 V, see figure 2
f = 1 MHz
f = 1 MHz
L
D
= 0 or 5 V
IN
= 10 nF
=
= 2.4 V, 0.8 V
±
D
g
S
L
L
L
15.5 V
S
= 0 
=
=
= 35 pF
= 35 pF
= 5 pF,
= 10 V
±
±
8.5 V
15.5 V
f
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
- 0.0001
- 0.0001
0.0001
0.0001
Typ.
0.005
0.005
±
±
±
110
100
25
25
68
85
35
5
9
9
0.1
0.1
0.1
c
DG411, DG412, DG413
- 55 °C to 125 °C
Min.
- 0.25
- 0.25
- 0.4
- 0.5
- 0.5
- 15
- 20
- 20
- 40
- 1
- 5
- 1
- 5
A Suffix
d
Max.
0.25
0.25
175
240
145
160
0.4
0.5
0.5
15
35
45
20
20
40
1
5
1
5
d
Vishay Siliconix
- 0.25
- 0.25
- 40°C to 85 °C
Min.
- 0.4
- 0.5
- 0.5
- 15
- 10
- 5
- 5
- 1
- 5
- 1
- 5
D Suffix
d
www.vishay.com
Max.
0.25
0.25
175
220
145
160
0.4
0.5
0.5
15
35
45
10
5
5
1
5
1
5
d
Unit
nA
µA
pC
dB
pF
µA
ns

V
3