DG508BEY-T1-E3 Vishay, DG508BEY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: DG508BEY-T1-E3
• Description: IC MUX 8CHAN PREC 16-SOIC
• Manufacturer: Vishay
• Type: Analog Multiplexerr

Specifications of DG508BEY-T1-E3

• Function: Multiplexer
• Circuit: 1 x 8:1
• On-state Resistance: 500 Ohm
• Voltage Supply Source: Dual Supply
• Voltage - Supply, Single/dual (±): ±5 V ~ 20 V
• Current - Supply: 0.5mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• No. Of Circuits: 1
• Supply Current: 600µA
• On State Resistance Max: 380ohm
• Supply Voltage Range: ± 5V To ± 20V
• Operating Temperature Range: -40°C To +125°C
• Analogue Switch Case Style: SOIC
• No. Of: RoHS Compliant
• Package: 16SOIC N
• Maximum On Resistance: 500@12V Ohm
• Maximum Propagation Delay Bus To Bus: 300@±15V|400@12V ns
• Maximum High Level Output Current: 30 mA
• Multiplexer Architecture: 8:1
• Maximum Turn-off Time: 250@12V ns
• Maximum Turn-on Time: 300@12V ns
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG508BEY-T1-E3TR

DG508B, DG509B
Vishay Siliconix
www.vishay.com
4
SPECIFICATIONS Single Supply 12 V
Parameter
Analog Switch
Analog Signal Range
On-Resistance
R
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
Logic High Input Voltage
Logic Low Input Voltage
Logic High Input Current
Logic Low Input Current
Logic Input Capacitance
Dynamic Characteristics
Transition Time
Break-Before-Make Interval
Enable Turn-On Time
Enable Turn-Off Time
Charge Injection
Off Isolation
Crosstalk
- 3 dB Bandwidth
Total Harmonic Distortion
DS(on)
Matching
e
e
e
e
e
e
e
V
ΔR
Symbol
t
R
t
t
OFF(EN)
ANALOG
ON(EN)
X
TRANS
t
OIRR
I
I
I
I
V
OPEN
Q
THD
V
DS(on)
S(off)
D(off)
D(off)
D(on)
BW
C
TALK
DS(on)
I
I
INH
INL
IH
IL
INJ
in
C
VS
L
V+ = 12 V, V- = 0 V
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
V
VS
VS
V+ = 12 V, V- = 0 V (± 10 %)
= 1 nF, R
S
1
V
V
V
V
= V
R
1
= 10 V/0 V, VS
1
R
AX
D
D
S
C
R
L
= VS
= 5 V, VS
f = 20 Hz to 20 kHz
L
= 10 V/0 V, I
= 0 V/10 V,
= 10 V/0 V
, V
L
L
Test Conditions
V
V
= 1 MΩ, C
D
= 1 kΩ, C
AX
AX
= 5 pF, R
= 10 kΩ, 5 V
= 0 V/10 V
EN
R
f = 1 MHz
R
GEN
f = 1 MHz
, V
, V
8
L
L
= 5 V, C
= 2.0 V, 0.8 V
EN
EN
= 1 kΩ
= 50 Ω
= 0 Ω, V
2
= 2.0 V
= 0.8 V
to VS
L
L
L
S
8
= 35 pF
= 50 Ω
= 35 pF
L
= 0 V/10 V,
= 1 mA
RMS
= 35 pF,
8
GEN
DG508B
DG509B
DG508B
DG509B
= 0 V,
,
a
= 0 V
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
Typ.
0.26
- 80
- 88
265
165
125
200
2.5
10
37
75
4
c
- 40 °C to 125 °C
Min.
- 100
- 100
- 50
- 50
- 50
2.0
- 1
- 1
- 1
- 1
- 1
- 1
- 1
15
0
1
d
Max.
500
650
- 50
100
100
400
550
300
550
250
350
0.8
12
50
50
1
1
1
1
1
1
1
d
S09-1408-Rev. C, 27-Jul-09
Document Number: 64821
- 40 °C to 85 °C
Min.
- 100
- 100
- 50
- 50
- 50
2.0
- 1
- 1
- 1
- 1
- 1
- 1
- 1
15
0
1
d
Max.
500
600
100
100
400
500
300
425
250
300
0.8
12
50
50
50
1
1
1
1
1
1
1
d
Unit
MHz
nA
µA
pC
dB
pF
ns
%
Ω
V
V