LFEC3E-3QN208I Lattice, LFEC3E-3QN208I Datasheet - Page 255
LFEC3E-3QN208I
Manufacturer Part Number
LFEC3E-3QN208I
Description
IC FPGA 3KLUTS 208PQFP
Manufacturer
Lattice
Series
EC3r
Datasheets
1.LFEC3E-5TN144C.pdf
(163 pages)
2.LFE3-35EA-8FN672I.pdf
(21 pages)
3.LFEC3E-3QN208I.pdf
(478 pages)
Specifications of LFEC3E-3QN208I
Number Of Logic Elements/cells
3100
Number Of Labs/clbs
-
Total Ram Bits
56320
Number Of I /o
145
Number Of Gates
-
Voltage - Supply
1.14 V ~ 1.26 V
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 100°C
Package / Case
208-BFQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
Q6377645
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LFEC3E-3QN208I
Manufacturer:
Lattice Semiconductor Corporation
Quantity:
10 000
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Lattice Semiconductor
Figure 10-2. DQ-DQS During READ
Figure 10-3. DQ-DQS During WRITE
Implementing DDR Memory Interfaces with the LatticeECP/EC Devices
This section describes how to implement the read and write sections of a DDR memory interface. It also provides
details of the DQ and DQS grouping rules associated with the LatticeECP/EC and LatticeXP devices.
DQS Grouping
Each DQS group generally consists of at least 10 I/Os (1DQS, 8DQ and 1DM) to implement a complete 8-bit DDR
memory interface. In the LatticeECP/EC devices each DQS signal will span across 16 I/Os and in the LatticeXP
devices the DQS will span 14 I/Os. Any 10 of these 16 I/Os can be used to implement an 8-bit DDR memory inter-
face. In addition to the DQS grouping, the user must also assign one reference voltage VREF1 for a given I/O bank.
The tables below show the total number of DQS groups available per I/O bank for each device and package.
(at PIN)
(at PIN)
DQS
DQ
(at REG)
(at REG)
(at PIN)
(at PIN)
DQS
DQS
DQ
DQ
Preamble
REG and 90
DQS PIN to
Phase Shift
Degree
10-2
Postamble
LatticeECP/EC and LatticeXP
DDR Usage Guide
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