PI3USB10ZEEX Pericom Semiconductor, PI3USB10ZEEX Datasheet - Page 2
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PI3USB10ZEEX
Manufacturer Part Number
PI3USB10ZEEX
Description
IC USB SWITCH DUAL 2X1 12TDFN
Manufacturer
Pericom Semiconductor
Datasheet
1.PI3USB10MZKEX.pdf
(6 pages)
Specifications of PI3USB10ZEEX
Function
USB Switch
Circuit
2 x 2:1
On-state Resistance
8 Ohm
Voltage Supply Source
Single Supply
Voltage - Supply, Single/dual (±)
3 V ~ 3.6 V
Current - Supply
800µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
12-TDFN
Number Of Channels
1 Channel
On Resistance (max)
4 Ohms (Typ) @ 3.3 V
Propagation Delay Time
0.25 ns (Typ)@3.3V@- 40C to 85C
On Time (max)
15 ns @ 3.3 V @ - 40 C to 85 C
Off Time (max)
9 ns @ 3.3 V @ - 40 C to 85 C
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Power Dissipation
500 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PI3USB10ZEEX
Manufacturer:
SMD
Quantity:
34 000
Part Number:
PI3USB10ZEEX
Manufacturer:
PERICOM
Quantity:
20 000
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
DC Electrical Characteristics for USB 2.0 Switching over Operating Range
(T
Capacitance
Notes:
1.
2.
3.
4.
Storage Temperature ......................................... –65°C to +150°C
Supply Voltage to Ground Potential .................... –0.5V to +4.0V
DC Input Voltage ................................................. –0.5V to +5.5V
DC Output Current ........................................................... 120mA
Power Dissipation ................................................................ 0.5W
A
Paramenter
R
= –40°C to +85°C, V
For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
Typical values are at V
Measured by the voltage drop between A and B pins at indicated current through the switch. ON-resistance is determined by the lower of the
voltages on the two (A & B) pins.
This parameter is determined by device characterization but is not production tested.
FLAT(ON)
Parameters
ΔR
R
V
V
V
I
I
06-0013
IH
ON
IL
IH
IK
IL
ON
C
C
C
OFF
ON
IN
(T
(4)
A
Input HIGH Voltage
Input LOW Voltage
Clamp Diode Voltage
Input HIGH Current
Input LOW Current
Switch On-Resistance
On-Resistance Flatness
On-Resistance match from cen-
ter ports to any other port
= 25°C, f = 1MHz)
CC
CC
= 3.3V, T
= 3.3V ±10%)
Description
Switch Capacitance, Switch ON
Port I Capacitance, Switch OFF
A
= 25°C ambient and maximum loading.
Input Capacitance
(3)
(4)
Description
(4)
Guaranteed
HIGH level
Guaranteed HIGH level
V
V
V
V
I
V
V
V
I
IN
IN
CC
CC
CC
CC
CC
CC
CC
= –40mA
= -40mA
= Max., I
= Max., V
= Max., V
= Min., 1.25V ≤ V
= Min., V
I
= Min., 1.5V ≤ V
IN
= -40mA
Conditions
2
IN
Test
IN
Note:
INGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
IN
IN
= –18mA
@ 1.5V and
V
V
= VCC
= GND
CC
CC
Stresses greater than those listed under MAXIMUM RAT-
Test Conditions
IN
= 4.2V
= 3.3V
IN
V
≤ V
≤ V
IN
3.3V, Wide Bandwidth, 2-Channel,
CC
= 0V
2:1 Mux/DeMux USB 2.0 Switch
CC,
,
Min.
2.0V
1.6V
Typ.
2.0
4.0
6.0
Typ.
-0.7
1.0
0.9
4
(2)
Max.
10.0
3.0
6.0
PS8718B
Max.
-1.2
0.8
±5
±5
8
2
PI3USB10
Units
Units
pF
μA
Ω
V
03/16/06