M29F400FB55M3F2 Micron Technology Inc, M29F400FB55M3F2 Datasheet

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M29F400FB55M3F2

Manufacturer Part Number
M29F400FB55M3F2
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29F400FB55M3F2

Cell Type
NOR
Density
4Mb
Access Time (max)
55ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
19/18Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 125C
Package Type
SO W
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
512K/256K
Supply Current
20mA
Mounting
Surface Mount
Pin Count
44
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29F400FB55M3F2
Manufacturer:
ST
Quantity:
220
Part Number:
M29F400FB55M3F2
Manufacturer:
ST
0
Features
July 2010
Supply voltage
– V
Access time: 55 ns
Program / Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0x01
– Top Device codes:
– Bottom Device codes:
RoHS packages available
– SO44
– TSOP48
– TFBGA
CC
M29F200FT: 0x2251
M29F400FT: 0x2223
M29F800FT: 0x22D6
M29F160FT: 0x22D2
M29F200FB: 0x2257
M29F400FB: 0x22AB
M29F800FB: 0x2258
M29F160FB: 0x22D8
= 5 V
M29F 200FB, 400FB, 800FB, 160FB
M29F 200FT, 400FT, 800FT, 160FT
Rev 9
Automotive device grade 3:
– Temperature: –40 to 125 °C
Automotive device grade 6:
– Temperature: –40 to 85 °C
Automotive grade certified (AEC-Q100)
5 V Supply Flash Memory
Top / Bottom Boot Block
TSOP48 (N)
TFBGA48 (ZA)
12 x 20 mm
6 x 8 mm
SO44 (M)
FBGA
www.numonyx.com
1/67
1

Related parts for M29F400FB55M3F2

M29F400FB55M3F2 Summary of contents

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... M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Automotive device grade 3: – Temperature: –40 to 125 °C Automotive device grade 6: – Temperature: – °C Automotive grade certified (AEC-Q100) Rev 9 Top / Bottom Boot Block 5 V Supply Flash Memory TSOP48 ( SO44 (M) FBGA TFBGA48 (ZA www.numonyx.com 1/67 ...

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Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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... Erase Timer Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 5.5 Alternative Toggle Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 6 Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . and AC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 8 Package Mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 9 Part Numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Appendix A Block Address Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Appendix B Common Flash Interface (CFI Appendix C Block protection C.1 Programmer Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 C.2 In-System Technique Appendix D Revision History 3/67 ...

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List of tables Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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List of figures Figure 1. Logic Diagram ...

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... The memory is offered in TSOP48 (12 x 20mm), SO44 , and TFBGA48 (0.8 mm pitch) packages. The memory is supplied with all the bits erased (set to ’1’). 6/67 ® Axcell™ M29F 5 V Flash Memory device and Figure 11.: Block Addresses, M29F160 Figure 10.: Block (x16). The first or last ...

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Figure 1. Logic Diagram A0-A19 BYTE Table 1. Signal Names A0-A19 Address Inputs DQ0-DQ7 Data Inputs/Outputs DQ8-DQ14 Data Inputs/Outputs DQ15A–1 Data Input/Output or Address Input E Chip Enable G Output Enable W Write Enable RP Reset/Block ...

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Figure 2. TSOP Connections, M29F160F 8/67 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 A18 A17 AI06850_160 A16 ...

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Figure 3. TSOP Connections, M29F800F A15 1 A14 A13 A12 A11 A10 A18 A17 A16 BYTE V SS DQ15A–1 DQ7 ...

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Figure 4. TSOP Connections, M29F400F 10/67 A15 1 48 A14 A13 A12 A11 A10 A17 AI06850_400 A16 ...

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Figure 5. TSOP Connections, M29F200F A15 1 A14 A13 A12 A11 A10 A16 BYTE V SS DQ15A–1 DQ7 ...

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Figure 6. SO Connections, M29F800 12/ A18 A17 DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 22 23 DQ11 A10 ...

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Figure 7. SO Connections, M29F400 NC RB A17 DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 A10 A11 A12 A13 A14 A15 ...

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Figure 8. SO Connections, M29F200 14/ DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 23 DQ11 A10 ...

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Figure 9. TFBGA connections (top view through package the M29F800FT/B, A19 is NC (no connect); on the M29F400FT/B, A19-A18 are ...

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Figure 10. Block Addresses, M29F160 (x8) Top Boot Block Addresses (x8) 1FFFFFh 1FC000h 1FBFFFh 1FA000h 1F9FFFh 1F8000h 1F7FFFh 1F0000h 1EFFFFh 1E0000h 01FFFFh 010000h 00FFFFh 000000h Also see Appendix Appendix A: Block Address Table Figure 11. Block Addresses, M29F160 (x16) Top ...

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Figure 12. Block Addresses, M29F800 (x8) Top Boot Block Addresses (x8) FFFFFh 16 KByte FC000h FBFFFh 8 KByte FA000h F9FFFh 8 KByte F8000h F7FFFh 32 KByte F0000h EFFFFh 64 KByte E0000h 1FFFFh 64 KByte 10000h 0FFFFh 64 KByte 00000h Also ...

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Figure 14. Block Addresses, M29F400 (x8) Top Boot Block Addresses (x8) 7FFFFh 7C000h FBFFFh 7A000h 79FFFh 78000h 77FFFh 70000h 6FFFFh 60000h 1FFFFh 10000h 0FFFFh 00000h Also see Appendix Appendix A: Block Address Table Figure 15. Block Addresses, M29F400 (x16) Top ...

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Figure 16. Block Addresses, M29F200 (x8) Top Boot Block Addresses (x8) 3FFFFh 16 KByte 3C000h 3BFFFh 8 KByte 3A000h 39FFFh 8 KByte 38000h 37FFFh 32 KByte 30000h 3FFFFh 64 KByte 20000h 1FFFFh 64 KByte 10000h 0FFFFh 64 KByte 00000h Also ...

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Signal Descriptions See Figure 1.: Logic Diagram connected to this device. 2.1 Address Inputs (A0-A19) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands ...

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Write Enable The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface. 2.8 Reset/Block Temporary Unprotect The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily ...

Page 22

A 0.1µF capacitor should be connected between the V Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations, I 2.12 V ...

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Bus Operations There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See BYTE = VIL and Table 3.: Bus Operations, BYTE = VIH less than 5ns ...

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Automatic Standby If CMOS levels (V CC more the memory enters Automatic Standby where the internal Supply Current is reduced to the Standby Supply Current, I Read operation is in progress. 3.6 Special Bus Operations Additional bus operations can ...

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Table 2. Bus Operations, BYTE = V Operation Bus Read Bus Write Output Disable Standby Read ...

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Command Interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in the ...

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During the program operation the memory will ignore all commands not possible to issue any command to abort or pause the operation. Typical program times are given in Table 6.: Program/Erase Times and Program/Erase Endurance Cycles, Read operations ...

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No error condition is given when protected blocks are ignored. During the erase operation the memory will ignore all commands not possible to issue any command to abort the operation. Typical ...

Page 29

... Erase Suspend. An erase can be suspended and resumed more than once. 4.11 Read CFI Query Command The Read CFI Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. This command is valid when the device is in the Read Array mode, or when the device is in Auto Select mode. ...

Page 30

Table 4. Commands, 16-bit mode, BYTE = V Command Addr Addr Addr Addr Addr Addr Addr Addr Addr Addr Addr Addr 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 ...

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Table 5. Commands, 8-bit mode, BYTE = V Command Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data 1 X Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Unlock Bypass 3 AAA Unlock Bypass 2 ...

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Table 6. Program/Erase Times and Program/Erase Endurance Cycles, M29F160F Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend Latency Time Program (Byte or Word) Chip Program (Byte by Byte) Chip Program (Word by Word) Program/Erase Cycles (per Block) Data Retention ...

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Table 8. Program/Erase Times and Program/Erase Endurance Cycles, M29F400F Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend Latency Time Program (Byte or Word) Chip Program (Byte by Byte) Chip Program (Word by Word) Program/Erase Cycles (per Block) Data Retention ...

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Status Register Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Suspend when an address within a block being erased is accessed. The bits in the ...

Page 35

Error Bit The Error Bit (DQ5) can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct data ...

Page 36

Table 10. Status Register Bits Operation Program Program During Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Erase Suspend Erase Error Unspecified data bits should be ignored. Figure 1. Data Polling Flowchart 36/67 Address DQ7 DQ6 ...

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Figure 2. Data Toggle Flowchart START READ DQ6 READ DQ5 & DQ6 DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 TWICE DQ6 NO = TOGGLE YES FAIL PASS AI01370C 37/67 ...

Page 38

Maximum Rating Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings ...

Page 39

DC and AC Parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement ...

Page 40

Table 13. Device Capacitance Symbol C Input Capacitance IN C Output Capacitance OUT Sampled only, not 100% tested. Table 14. DC Characteristics Symbol Parameter Input Leakage Current 0V ≤ Output Leakage I LO Current I Supply Current ...

Page 41

Table 15. Read AC Characteristics Symbol Alt Address Valid to Next Address t t AVAV RC Valid t t Address Valid to Output Valid AVQV ACC Chip Enable Low to Output t t ELQX LZ Transition t t Chip Enable ...

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Table 16. Write AC Characteristics, Write Enable Controlled Symbol Alt t t AVAV ELWL WLWH DVWH WHDX WHEH WHWL WPH t t ...

Page 43

Table 17. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable Low to Chip Enable Low WLEL Chip Enable Low to Chip Enable High ...

Page 44

Table 18. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt t PHWL t t PHEL RH t PHGL t RHWL t t RHEL RB t RHGL t t PLPX PLYH READY t t PHPHH VIDR ...

Page 45

Package Mechanical Figure 24. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline, top view DIE Drawing is not to scale. Table 19. TSOP48 – 48 lead Plastic Thin Small Outline, 12 ...

Page 46

Figure 25. SO44 – 44 lead plastic small outline, 500 mils body width, package outline SO-F Table 20. SO44 - 44 lead Plastic Small Outline, 500 mils body width, package mechanical data Symbol ...

Page 47

Figure 26. TFBGA48 ball array, 0.80 mm pitch, package outline FD FE BALL "A1" Table 21. TFBGA48 ball array, 0.80 ...

Page 48

Part Numbering Table 22. Information scheme Example: Device type M29F = 5 V Density 200 = 2-Mbit 400 = 4-Mbit 800 = 8-Mbit 160 = 16-Mbit (not available in SO44 package) Technology F = 110 nm Configuration T = ...

Page 49

Appendix A Block Address Table Table 23. Top Boot Block Addresses, M29F160FT Size # (KBytes ...

Page 50

Table 24. Bottom Boot Block Addresses, M29F160FB Size # (KBytes ...

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Table 25. Top Boot Block Addresses, M29F800FT Size # (KBytes FC000h-FFFFFh 17 8 FA000h-FBFFFh 16 8 F8000h-F9FFFh 15 32 F0000h-F7FFFh 14 64 E0000h-EFFFFh 13 64 D0000h-DFFFFh 12 64 C0000h-CFFFFh 11 64 B0000h-BFFFFh 10 64 A0000h-AFFFFh 9 64 90000h-9FFFFh ...

Page 52

Table 26. Bottom Boot Block Addresses, M29F800FB Size # (KBytes ...

Page 53

Table 27. Top Boot Block Addresses, M29F400FT Size # (KBytes 7C000h-7FFFFh 9 8 7A000h-7BFFFh 8 8 78000h-79FFFh 7 32 70000h-77FFFh 6 64 60000h-6FFFFh 5 64 50000h-5FFFFh 4 64 40000h-4FFFFh 3 64 30000h-3FFFFh 2 64 20000h-2FFFFh 1 64 10000h-1FFFFh ...

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Table 28. Bottom Boot Block Addresses, M29F400FB Size # (KBytes 54/67 Address Range (x8) 70000h-7FFFFh 70000h-6FFFFh 50000h-5FFFFh 40000h-4FFFFh ...

Page 55

Table 29. Top Boot Block Addresses, M29F200FT Size # (KBytes 3C000h-3FFFFh 5 8 3A000h-3BFFFh 4 8 38000h-39FFFh 3 32 30000h-37FFFh 2 64 20000h-2FFFFh 1 64 10000h-1FFFFh 0 64 00000h-0FFFFh Table 30. Bottom Boot Block Addresses, M29F200FB Size # ...

Page 56

... Common Flash Interface (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary ...

Page 57

... Logic Supply Minimum Program/Erase voltage CC Logic Supply Maximum Program/Erase voltage CC [Programming] Supply Minimum Program/Erase voltage PP [Programming] Supply Maximum Program/Erase voltage PP Description n Device Size = 2 in number of Bytes Flash Device Interface Code description Maximum number of Bytes in multi-Byte program or page = Value 4 µs 8 µs n µ ...

Page 58

Address Data x16 x8 2Ch 58h 0004h 2Dh 5Ah 0000h 2Eh 5Ch 0000h 2Fh 5Eh 0040h 30h 60h 0000h 31h 62h 0001h 32h 64h 0000h 33h 66h 0020h 34h 68h 0000h 35h 6Ah 0000h 36h 6Ch 0000h 37h 6Eh 0080h ...

Page 59

Address Data x16 x8 Block Protection 47h 8Eh 0001h 00 = not supported number of blocks in per group Temporary Block Unprotect 48h 90h 0001h 00 = not supported supported Block Protect /Unprotect 0002h 02 = ...

Page 60

... Block protection Block protection can be used to prevent any operation from modifying the data stored in the Flash memory. Each Block can be protected individually. Once protected, Program and Erase operations on the block fail to change the data. There are three techniques that can be used to control Block Protection, these are the Programmer technique, the In-System technique and Temporary Unprotection. Temporary Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP ...

Page 61

Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. Table 37. Programmer Technique Bus Operations, BYTE = V Operation E G Block Protect ...

Page 62

Figure 27. Programmer Equipment Block Protect Flowchart Address Inputs A19-A12 give the address of the block that protected imperative that they remain stable during the operation. During the Protect and Verify phases of the algorithm, ...

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Figure 28. Programmer Equipment Chip Unprotect Flowchart ADDR CUR BLOCK ADDR ++n = 1000 FAIL S TAR ...

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Figure 29. In-System Equipment Block Protect Flowchart 64/67 START WRITE 60h ADDRESS = BLOCK ADDRESS WRITE 60h ADDRESS = ...

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Figure 30. In-System Equipment Chip Unprotect Flowchart ADDRESS = CURRENT BLOCK ADDRESS ADDRESS = CURRENT BLOCK ADDRESS ++ 1000 YES ISSUE READ/RESET COMMAND FAIL START PROTECT ALL BLOCKS CURRENT BLOCK = ...

Page 66

... Auto Select Command Table 14.: DC Characteristics, changed I 3 Max value from 20 to 30; changed V Figure 9.: TFBGA connections (top view through Characteristics, changed V Appendix B: Common Flash Interface Table; 1 Max value from 10 to 20; changed CC value from 0.5 °C to –0.5 °C IL package), changed VPP/WP from 0 ...

Page 67

... Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. ...

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