APT10035LLLG MICROSEMI, APT10035LLLG Datasheet
APT10035LLLG
Manufacturer Part Number
APT10035LLLG
Description
Manufacturer
MICROSEMI
Type
Power MOSFETr
Datasheet
1.APT10035LLLG.pdf
(5 pages)
Specifications of APT10035LLLG
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.35Ohm
Drain-source On-volt
1kV
Gate-source Voltage (max)
±30V
Continuous Drain Current
28A
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-264
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT10035LLLG
Manufacturer:
APT
Quantity:
10 000
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
V
I
E
E
D(on)
DS(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
2
• Increased Power Dissipation
• Easier To Drive
• Popular
(V
DS
C
DS
APT Website - http://www.advancedpower.com
= V
1
C
= 25°C
> I
= 25°C
4
GS
GS
D(on)
2
DS
DS
, I
®
= ±30V, V
GS
D
by significantly lowering R
T-MAX™
= 800V, V
(V
= 1000V, V
R
x R
= 2.5mA)
= 0V, I
GS
DS(on)
MOSFET
= 10V, 14A)
D
DS
= 250µA)
Max, V
GS
= 0V)
or TO-264 Package
GS
= 0V, T
= 0V)
GS
All Ratings: T
= 10V)
C
= 125°C)
DS(ON)
APT10035B2LL
1000V 28A 0.350
C
APT10035LLL
= 25°C unless otherwise specified.
1000
MIN
28
3
B2LL
T-MAX™
-55 to 150
APT10035
1000
3000
5.52
TYP
112
±30
±40
690
300
28
28
50
0.350
±100
MAX
100
500
5
TO-264
G
LLL
Ohms
Amps
Watts
Amps
Amps
UNIT
Volts
Volts
W/°C
UNIT
Volts
Volts
mJ
µA
nA
°C
D
S
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APT10035LLLG Summary of contents
Page 1
POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...
Page 3
Typical Performance Curves RC MODEL Junction temp. ( ”C) 0.0271 Power 0.0656 (Watts) 0.0859 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL > (ON (ON)MAX. 70 250µSEC. PULSE TEST @ <0.5 % ...
Page 4
Typical Performance Curves 112 OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA ...
Page 5
Gate Voltage d(on Drain Current 90 Drain Voltage Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT15DF120B D.U.T. Figure 20, Inductive ...