TPC8303 Toshiba, TPC8303 Datasheet

TPC8303

Manufacturer Part Number
TPC8303
Description
Manufacturer
Toshiba
Type
Power MOSFETr
Datasheet

Specifications of TPC8303

Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.035Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
4.5A
Power Dissipation
1.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOP
Lead Free Status / Rohs Status
Not Compliant

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Lithium-Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Absolute Maximum Ratings
Low drain−source ON resistance
High forward transfer admittance : |Y
Low leakage current : I
Enhancement mode : V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note: For Notes 1 to 5, see the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
(Note 2a)
(Note 2b)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
(Note 2a, Note 3b, Note 5)
DC
Pulse
Single-device
operation
Single-device value
at dual operation
Single-device
operation
Single-device value
at dual operation
GS
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
= 20 kΩ)
DSS
(Note 3a)
(Note 3a)
(Note 3b)
(Note 3b)
th
(Note 1)
(Note 1)
(Note 4)
= −0.8~ −2.0 V (V
= −10 μA (max.) (V
: R
(Ta = 25°C)
Symbol
V
P
P
P
V
V
DS (ON)
P
E
E
T
I
I
T
D (1)
D (1)
D (2)
DGR
GSS
DSS
D(2)
fs
I
DP
AR
AS
AR
stg
D
ch
TPC8303
| = 7 S (typ.)
DS
= 27 mΩ (typ.)
DS
= −10 V, I
−55~150
= −30 V)
Rating
−4.5
0.75
0.45
−4.5
0.10
−30
−30
±20
−18
150
1.5
1.0
26
1
D
= −1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.08 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
2-6J1E
2006-11-16
TPC8303
Unit: mm

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TPC8303 Summary of contents

Page 1

... − −1 mA (Ta = 25°C) Symbol Rating Unit V −30 V DSS V −30 V DGR V ±20 V GSS I −4 − 1 1.0 D(2) P 0. 0. −4 0. 150 ° −55~150 °C stg 1 TPC8303 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.08 g (typ.) Circuit Configuration 2006-11-16 ...

Page 2

... R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board ( Ω −4 TPC8303 Max Unit 83.3 125 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) 2006-11-16 ...

Page 3

... ≈ − − (Ta = 25°C) Symbol Test Condition I — DRP −4 DSF TPC8303 Min. Typ. Max. — — ±10 — — −10 −30 — — −15 — — −0.8 — −2.0 — — 3.5 7 — — 970 — — 180 — ...

Page 4

... R – (ON) 500 300 100 − − −0.1 −0.3 −1 −3 Drain current I 4 TPC8303 D Common source Ta = 25°C Pulse test −10 −30 −100 (A) D 2006-11-16 ...

Page 5

... R – (ON) 80 Common source Pulse test −4 −2.2 A −1 −4.5 A, −2 −4 V −1.3 A − −80 − 120 Ambient temperature ° 160 5 TPC8303 2006-11-16 ...

Page 6

... TPC8303 2006-11-16 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8303 20070701-EN 2006-11-16 ...

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