HN58V65AP-10 HITACHI, HN58V65AP-10 Datasheet
HN58V65AP-10
Specifications of HN58V65AP-10
Available stocks
Related parts for HN58V65AP-10
HN58V65AP-10 Summary of contents
Page 1
To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
Page 2
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
Page 3
... Renesas Technology HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster ...
Page 4
... Ordering Information Access time Type No. 2 < 4 HN58V65AP-10 100 ns HN58V66AP-10 100 ns HN58V65AFP-10 100 ns HN58V66AFP-10 100 ns HN58V65AT-10 100 ns HN58V66AT-10 100 ns HN58V65AP-10E 100 ns HN58V66AP-10E 100 ns HN58V65AFP-10E 100 ns HN58V66AFP-10E 100 ns HN58V65AT-10E 100 ns HN58V66AT-10E 100 ns Rev.3.00, Dec. 04.2003, page and are also available. 4 5.5 V Package CC ...
Page 5
... HN58V65A Series, HN58V66A Series Pin Arrangement HN58V65AP Series HN58V65AFP Series Busy RDY/ 1 A12 I/O0 11 I/ (Top view) Rev.3.00, Dec. 04.2003, page HN58V66AP Series HN58V66AFP Series Busy V RDY A12 A11 A10 I/ I/O0 I/ I/O5 I/ I/ RES A11 A10 I/O7 19 I/O6 18 I/O5 ...
Page 6
HN58V65A Series, HN58V66A Series Pin Arrangement (cont I/O0 19 I/ I/O3 23 I/O4 24 I/O5 25 I/ A10 ...
Page 7
HN58V65A Series, HN58V66A Series Pin Description Pin name A0 to A12 I/ RDY/Busy RES Note: 1. This function is supported by only the HN58V66A series. Block Diagram Note: 1. ...
Page 8
HN58V65A Series, HN58V66A Series Operation Table Operation Read Standby Write Deselect Write Inhibit V Data Polling Program ...
Page 9
HN58V65A Series, HN58V66A Series DC Characteristics ( Parameter Symbol Input leakage current I LI Output leakage current I LO Standby V curren I CC CC1 I CC2 Operating V current I CC CC3 ...
Page 10
HN58V65A Series, HN58V66A Series AC Characteristics ( Test Conditions Input pulse levels : 0 2 Input rise and fall time : 5 ns Input ...
Page 11
HN58V65A Series, HN58V66A Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE ...
Page 12
HN58V65A Series, HN58V66A Series Read Cycle Parameter Symbol Min Address to output delay t ACC CE to output delay output delay t OE Address to output hold t OH ...
Page 13
HN58V65A Series, HN58V66A Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE ...
Page 14
HN58V65A Series, HN58V66A Series Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out RES 2 * Rev.3.00, Dec. 04.2003, page ACC Data out valid ...
Page 15
HN58V65A Series, HN58V66A Series Byte Write Timing Waveform(1) (WE Controlled) Address Din High-Z Busy RDY/ t RES RES Rev.3.00, Dec. 04.2003, page ...
Page 16
HN58V65A Series, HN58V66A Series Byte Write Timing Waveform(2) (CE Controlled) Address Din High-Z Busy RDY/ t RES RES Rev.3.00, Dec. 04.2003, page ...
Page 17
HN58V65A Series, HN58V66A Series Page Write Timing Waveform(1) (WE Controlled) *7 Address A0 to A12 OES Din t DB Busy ...
Page 18
HN58V65A Series, HN58V66A Series Page Write Timing Waveform(2) (CE Controlled) *8 Address A0 to A12 OES Din t DB Busy ...
Page 19
HN58V65A Series, HN58V66A Series Data Polling Timing Waveform Data Data Data Address OEH Din X I/O7 Rev.3.00, Dec. 04.2003, page Dout ...
Page 20
... HN58V65A Series, HN58V66A Series Toggle Bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When the internal programming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program ...
Page 21
HN58V65A Series, HN58V66A Series Software Data Protection Timing Waveform(1) (in protection mode Address 1555 0AAA Data AA 55 Software Data Protection Timing Waveform(2) (in non-protection mode Address 1555 0AAA Data AA 55 ...
Page 22
... Data Polling Data Data Data Data polling indicates the status that the EEPROM write cycle or not. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the EEPROM is performing a write operation. Busy Busy Signal ...
Page 23
... To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width less. 1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. Be careful not to allow noise of a width of more than the control pins. ...
Page 24
... CC act as a trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable state while the CPU unstable state. Note: The EEPROM shoud be kept in unprogrammable state during V signal ...
Page 25
HN58V65A Series, HN58V66A Series 3. Software data protection To prevent unintentional programming caused by noise generated by external circuits, this device has the software data protection function. In software data protection mode, 3 bytes of data must be input before ...
Page 26
... HN58V65A Series, HN58V66A Series Package Dimensions HN58V65AP Series HN58V66AP Series (DP-28, DP-28V) 35.6 36.5 Max 28 1 1.2 1.9 Max 2.54 ± 0.25 Rev.3.00, Dec. 04.2003, page 0.48 ± 0.10 0 ˚ – 15 ˚ Package Code JEDEC JEITA Mass (reference value) Unit: mm 15. ...
Page 27
HN58V65A Series, HN58V66A Series Package Dimensions (cont) HN58V65AFP Series HN58V66AFP Series (FP-28D, FP-28DV) 18.3 18.8 Max 28 1 1.12 Max 1.27 *0.40 ± 0.08 0.38 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.3.00, Dec. 04.2003, page 25 ...
Page 28
HN58V65A Series, HN58V66A Series Package Dimensions (cont) HN58V65AT Series HN58V66AT Series (TFP-28DB, TFP-28DBV) 8.00 8.20 Max 0.55 *0.22 ± 0.08 0.10 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension Rev.3.00, ...
Page 29
... Functional Description 2.0 Jan. 22.1998 Change of Subtitle 3.00 Dec. 04. 2003 Change format issued by Renesas Technology Corp. 2 Ordering Information Addition of HN58V65AP-10E, HN58V66AP-10E, HN58V65AFP-10E, HN58V66AFP-10E, HN58V65AT-10E, HN58V66AT-10E 24-26 Package Dimensions DP-28 to DP-28, DP-28V FP-28D to FP-28D, FP-28DV TFP-28DB to TFP-28DB, TFP-28DBV HN58V65A/HN58V66A Series Data Sheet (typ ...
Page 30
Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...