M58BW016DB80T3F Micron Technology Inc, M58BW016DB80T3F Datasheet - Page 49

• Manufacturer Part Number: M58BW016DB80T3F
• Manufacturer: Micron Technology Inc

Specifications of M58BW016DB80T3F

• Lead Free Status / Rohs Status: Not Compliant

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 15. Synchronous burst read - continuous - valid data ready output
1. Valid Data Ready = Valid Low during valid clock edge.
2. V= Valid output.
3. R is an open drain output with an internal pull up resistor of 1 M
Figure 16. Synchronous burst read - burst address advance
typically 300 k
that valid data is available on the next valid clock edge.
K
ADD
L
ADD
G
B
K
Output
R
(1)
for a single memory on the R bus, should be used to give the data valid set up time required to recognize
VALID
V
V
tGLQV
V
tRLKH
tBLKH
The internal timing of R follows DQ. An external resistor,
Q0
(2)
V
Q1
tBHKH
V
Q2
DC and AC parameters
AI03649
AI03650
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