TC55V16256FT-15 Toshiba, TC55V16256FT-15 Datasheet

TC55V16256FT-15

Manufacturer Part Number

TC55V16256FT-15

Description

Manufacturer

Toshiba

Datasheet

1.TC55V16256FT-15.pdf (11 pages)

Specifications of TC55V16256FT-15

Density

4Mb

Access Time (max)

15ns

Sync/async

Asynchronous

Architecture

Not Required

Clock Freq (max)

Not RequiredMHz

Operating Supply Voltage (typ)

3.3V

Address Bus

18b

Package Type

TSOP-II

Operating Temp Range

0C to 70C

Number Of Ports

Supply Current

190mA

Operating Supply Voltage (min)

Operating Supply Voltage (max)

3.6V

Operating Temperature Classification

Commercial

Mounting

Surface Mount

Pin Count

Word Size

16b

Number Of Words

256K

Lead Free Status / Rohs Status

Not Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC55V16256FT-15

Manufacturer:

TOSHIBA

Quantity:

5 380

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC55V16256FT-15

Manufacturer:

TOSHIBA

Quantity:

Company:

BOSTOCK HK LIMITED

Part Number:

TC55V16256FT-15

Manufacturer:

TOSHIBA

Quantity:

1 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

TC55V16256FT-15

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

Current page: 1 of 11
Download datasheet (184Kb)

262,144-WORD BY 16-BIT CMOS STATIC RAM

DESCRIPTION

words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it

operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode,

and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide lower and upper

byte access. This device is well suited to cache memory applications where high-speed access and high-speed

storage are required. All inputs and outputs are directly LVTTL compatible. The TC55V16256J/FT is available in

plastic 44-pin SOJ and TSOP with 400mil width for high density surface assembly.

FEATURES

•

PIN ASSIGNMENT

GND

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O8

A15

A14

A13

A12

A16

The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144

Fast access time (the following are maximum values)

Low-power dissipation

(the following are maximum values)

44 PIN SOJ

Operation (max)

(TC55V16256J)

TC55V16256J/FT-12:12 ns

TC55V16256J/FT-15:15 ns

Standby:4 mA (both devices)

Cycle Time

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

220

I/O16

I/O15

I/O14

I/O13

GND

I/O12

I/O11

I/O10

I/O9

A10

A11

A17

(TOP VIEW)

190

GND

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O8

A15

A14

A13

A12

A16

44 PIN TSOP

160

140

(TC55V16256FT)

I/O16

I/O15

I/O14

I/O13

GND

I/O12

I/O11

I/O10

I/O9

A10

A11

A17

•

Single power supply voltage of 3.3 V ± 0.3 V

Fully static operation

All inputs and outputs are LVTTL compatible

Output buffer control using OE

Data byte control using LB (I/O1 to I/O8) and

Package:

UB (I/O9 to I/O16)

SOJ44-P-400-1.27 (J)

TSOP II44-P-400-0.80 (FT)

PIN NAMES

I/O1 to I/O16 Data Inputs/Outputs

A0 to A17

LB , UB

GND

TC55V16256J/FT-12,-15

Address Inputs

Chip Enable Input

Write Enable Input

Output Enable Input

Data Byte Control Inputs

Power (+3.3 V)

Ground

Not Usable (Input)

2002-01-07 1/11

(Weight: 1.64 g typ)

(Weight: 0.45 g typ)

Related parts for TC55V16256FT-15

TC55V16256FT-15 Summary of contents

Page 1

... I/O10 A10 21 24 A11 22 23 A17 (TC55V16256FT) TC55V16256J/FT-12,-15 (Weight: 1.64 g typ) (Weight: 0.45 g typ A17 Address Inputs I/O1 to I/O16 Data Inputs/Outputs CE Chip Enable Input WE Write Enable Input OE Output Enable Input Data Byte Control Inputs V Power (+3 GND Ground NU Not Usable (Input) ...

Page 2

BLOCK DIAGRAM A13 A14 A15 A17 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 I/O16 GENERATOR MAXIMUM RATINGS SYMBOL V Power Supply ...

Page 3

DC RECOMMENDED OPERATING CONDITIONS SYMBOL V Power Supply Voltage DD V Input High Voltage IH V Input Low Voltage IL *: −1.0 V with a pulse width of 20%･t + 1.0 V with a pulse width of 20%･t **: V ...

Page 4

OPERATING MODE MODE CE Read L Write L L Outputs Disable L Standby Don’t care Note: The NU pin must be left unconnected or tied to GND or a voltage level of less than 0.8 V. You ...

Page 5

AC CHARACTERISTICS READ CYCLE SYMBOL PARAMETER t Read Cycle Time RC t Address Access Time ACC t Chip Enable Access Time CO t Output Enable Access Time OE t Upper Byte, Lower ...

Page 6

TIMING DIAGRAMS (See Note 2) READ CYCLE Address Hi-Z OUT WRITE CYCLE CONTROLLED) Address OUT ACC ...

Page 7

WRITE CYCLE CONTROLLED) Address Hi-Z OUT WRITE CYCLE CONTROLLED) Address Hi-Z OUT D IN ...

Page 8

Note: (1) Operating temperature (Ta) is guaranteed for transverse air flow exceeding 400 linear feet per minute. (2) WE remains HIGH for the Read Cycle. ( goes LOW coincident with or after WE goes LOW, the outputs will ...

Page 9

PACKAGE DIMENSIONS SOJ44-P-400-1.27 Weight: 1.64 g (typ) TC55V16256J/FT-12,-15 2002-01-07 9/11 ...

Page 10

PACKAGE DIMENSIONS Weight: 0.45 g (typ) TC55V16256J/FT-12,-15 2002-01-07 10/11 ...

Page 11

... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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