TE28F640J3D75 Intel, TE28F640J3D75 Datasheet - Page 22

• Manufacturer Part Number: TE28F640J3D75
• Manufacturer: Intel

Specifications of TE28F640J3D75

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 75ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 23/22Bit
• Operating Supply Voltage (typ): 3/3.3V
• Sync/async: Asynchronous
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 8M/4Mword
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

6.2
Table 8:
6.3
Table 9:
Notes:
1.
2.
Datasheet
22
Notes:
1.
2.
3.
4.
5.
6.
Symbol
V
V
V
V
PENLK
V
V
V
PENH
LKO
OH
OL
IH
IL
Symbol
C
C
sampled. not 100% tested.
T
OUT
Includes STS.
Sampled, not 100% tested.
Block erases, programming, and lock-bit configurations are inhibited when V
in the range between V
Block erases, programming, and lock-bit configurations are inhibited when V
the range between V
Includes all operational modes of the device including standby and power-up sequences
Input/Output signals can undershoot to -1.0v referenced to V
duration of 2ns or less, the V
A
IN
= +25 °C, f = 1 MHZ
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Erase and Lock-Bit Operations
V
or Lock-Bit Operations
V
PEN
PEN
CC
DC Voltage Characteristics
Numonyx™ Embedded Flash Memory (J3 v. D) Capacitance
Lockout Voltage
during Block Erase, Program,
DC Voltage specifications
Lockout during Program,
Capacitance
V
V
CCQ
CC
Parameter
Output Capacitance
Input Capacitance
LKO
PENLK
(min) and V
(max) and V
CCQ
Parameter
valid range is referenced to V
CC
(min), and above V
PENH
0.85 × V
V
CCQ
1
–0.5
Min
(min), and above V
2.0
2.7
2.0
32, 64, 128 Mb
32, 64, 128 Mb
–
0.2
CCQ
256 Mb
256 Mb
2.7 - 3.6 V
2.7 - 3.6 V
CC
V
(max).
SS
CCQ
SS
and can overshoot to V
.
Max
0.8
0.4
0.2
2.2
3.6
PENH
+ 0.5V
Numonyx™ Embedded Flash Memory (J3 v. D)
(max).
Type
12
16
6
8
PEN
CC
< V
Unit
≤ V
V
V
V
V
V
V
V
V
V
LKO
PENLK
Max
16
12
24
8
, and not guaranteed in
CCQ
V
V
I
V
V
I
V
V
I
V
V
I
, and not guaranteed
OL
OL
OH
OH
CC
CCQ
CC
CCQ
CC
CCQ
CC
CCQ
Test Conditions
= 2 mA
= 100 µA
= –2.5 mA
= –100 µA
= 1.0v for
= V
= V
= V
= V
Unit
= V
= V
= V
= V
pF
pF
CC
CC
CCMIN
CCMIN
CCQ
CCQ
CCQ
CCQ
Min
Min
Min
Min
Min
Min
V
Condition
V
November 2007
OUT
IN
= 0.0 V
= 0.0 V
308551-05
2, 5, 6
2, 5, 6
Notes
1, 2
1, 2
2, 3
3
4
2