TE28F640J3D75 Intel, TE28F640J3D75 Datasheet - Page 38

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TE28F640J3D75

Manufacturer Part Number
TE28F640J3D75
Description
Manufacturer
Intel
Datasheet

Specifications of TE28F640J3D75

Cell Type
NOR
Density
64Mb
Access Time (max)
75ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Sync/async
Asynchronous
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4Mword
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant
Note:
9.2.2
9.2.3
9.2.4
9.3
Note:
Datasheet
38
To change the device to Read Array mode while it is programming or erasing, first issue
the Suspend command. After the operation has been suspended, issue the Read Array
command. When the program or erase operation is subsequently resumed, the device
will automatically revert back to Read Status mode.
Issuing the Read Array command to the device while it is actively programming or
erasing causes subsequent reads from the device to output invalid data. Valid array
data is output only after the program or erase operation has finished.
The Read Array command functions independent of the voltage level on VPEN.
Read Status Register
Issuing the Read Status Register command places the device in Read Status Register
mode. Subsequent reads output Status Register information on DQ[7:0], and 00h on
DQ[15:8]. The device remains in Read Status Register mode until a different read-
mode command is issued. Performing a program, erase, or block-lock operation also
changes the device’s read mode to Read Status Register mode.
The Status Register is updated on the falling edge of CE#, or OE# when CE# is low.
Status Register contents are valid only when SR7 = 1. When WSM is active, SR7
indicates the WSM’s state and SR[6:0] are in high-Z state.
The Read Status Register command functions independent of the voltage level on
VPEN.
Read Device Information
Issuing the Read Device Information command places the device in Read Device
Information mode. Subsequent reads output device information on DQ[15:0]. In the
case of the 256 Mbit device (2 x 128), the command should be issued to the base
address of the die.
The device remains in Read Device Information mode until a different read command is
issued. Also, performing a program, erase, or block-lock operation changes the device
to Read Status Register mode.
The Read Device Information command functions independent of the voltage level on
VPEN.
CFI Query
The query table contains an assortment of flash product information such as block size,
density, allowable command sets, electrical specifications, and other product
information. The data contained in this table conforms to the Common Flash Interface
(CFI) protocol.
Issuing the CFI Query command places the device in CFI Query mode. Subsequent
reads output CFI information on DQ[15:0] .The device remains in CFI Query mode until
a different read command is issued, or a program or erase operation is performed,
which changes the read mode to Read Status Register mode.
The CFI Query command functions independent of the voltage level on VPEN.
Programming Operations
All programming operations require the addressed block to be unlocked, and a valid
VPEN voltage applied throughout the programming operation. Otherwise, the
programming operation will abort, setting the appropriate Status Register error bit(s).
Numonyx™ Embedded Flash Memory (J3 v. D)
November 2007
308551-05

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