DSP56301PW80B1 Freescale Semiconductor, DSP56301PW80B1 Datasheet - Page 45

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DSP56301PW80B1

Manufacturer Part Number
DSP56301PW80B1
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of DSP56301PW80B1

Device Core Size
24b
Format
Fixed Point
Clock Freq (max)
80MHz
Mips
80
Device Input Clock Speed
80MHz
Ram Size
24KB
Program Memory Size
Not RequiredKB
Operating Supply Voltage (typ)
3.3V
Operating Supply Voltage (min)
3V
Operating Supply Voltage (max)
3.6V
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
208
Package Type
TQFP
Lead Free Status / Rohs Status
Not Compliant
Notes:
No.
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
Freescale Semiconductor
Page mode cycle time for two consecutive accesses of the
same direction
Page mode cycle time for mixed (read and write) accesses
CAS assertion to data valid (read)
Column address valid to data valid (read)
CAS deassertion to data not valid (read hold time)
Last CAS assertion to RAS deassertion
Previous CAS deassertion to RAS deassertion
CAS assertion pulse width
Last CAS deassertion to RAS assertion
CAS deassertion pulse width
Column address valid to CAS assertion
CAS assertion to column address not valid
Last column address valid to RAS deassertion
WR deassertion to CAS assertion
CAS deassertion to WR assertion
CAS assertion to WR deassertion
WR assertion pulse width
Last WR assertion to RAS deassertion
WR assertion to CAS deassertion
Data valid to CAS assertion (write)
CAS assertion to data not valid (write)
WR assertion to CAS assertion
Last RD assertion to RAS deassertion
RD assertion to data valid
RD deassertion to data not valid
WR assertion to data active
WR deassertion to data high impedance
BRW[1–0] = 00
BRW[1–0] = 01
BRW[1–0] = 10
BRW[1–0] = 11
1.
2.
3.
4.
5.
6.
The number of wait states for Page mode access is specified in the DCR.
The refresh period is specified in the DCR.
The asynchronous delays specified in the expressions are valid for DSP56301.
All the timings are calculated for the worst case. Some of the timings are better for specific cases (for example, t
3 × T
BRW[1–0] (DRAM control register bits) defines the number of wait states that should be inserted in each DRAM out-of-page
access. N/A = does not apply because 100 MHz requires a minimum of three wait states.
RD deassertion always occurs after CAS deassertion; therefore, the restricted timing is t
C
for read-after-read or write-after-write sequences).
Characteristics
Table 2-11.
6
5
DRAM Page Mode Timings, Four Wait States
DSP56301 Technical Data, Rev. 10
Symbol
t
t
t
t
t
RHCP
t
t
t
t
t
t
t
t
t
t
t
WCH
WCS
RCH
t
RWL
CWL
t
ROH
t
t
CAC
t
OFF
RSH
CAS
CRP
t
ASC
CAH
RAL
RCS
t
t
WP
PC
AA
CP
DS
DH
GA
GZ
2.75 × T
3.75 × T
4.25 × T
5.25 × T
7.25 × T
1.25 × T
1.25 × T
3.25 × T
4.75 × T
3.75 × T
1.25 × T
3.25 × T
0.75 × T
Not supported
0.5 × T
Expression
3.5 × T
2.5 × T
3.5 × T
4.5 × T
3.5 × T
4.5 × T
6 × T
2 × T
5 × T
0.25 × T
4.5 × T
T
5 × T
C
C
C
− 4.0
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
− 4.0
− 4.0
− 4.0
C
− 4.0
− 4.0
− 4.0
− 4.5
– 4.8
− 4.0
− 4.0
− 5.7
− 5.7
− 6.0
− 6.0
− 6.0
− 4.0
– 3.7
− 4.2
− 4.3
− 4.3
− 4.3
− 5.7
– 1.5
C
C
Min
62.5
56.2
39.8
71.0
27.3
47.2
59.6
84.6
21.0
39.8
58.5
11.8
11.9
36.4
51.8
55.1
42.6
39.8
11.3
52.3
OFF
0.0
8.5
1.5
0.0
7.9
80 MHz
1, 2, 3
and not t
AC Electrical Characteristics
Max
28.7
41.2
34.9
3.1
GZ
.
Min
50.0
45.0
31.0
56.0
21.0
36.5
46.5
66.5
16.0
31.0
46.0
28.3
40.5
43.2
33.2
31.0
41.0
0.0
6.0
8.5
8.8
0.2
8.2
0.0
6.0
100 MHz
PC
Max
21.8
31.8
26.8
2.5
equals
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2-19

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