BLF202 NXP Semiconductors, BLF202 Datasheet - Page 6

• Manufacturer Part Number: BLF202
• Manufacturer: NXP Semiconductors

Specifications of BLF202

• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 40V
• Output Power (max): 2W
• Power Gain (typ)@vds: 13@12.5VdB
• Frequency (max): 175MHz
• Package Type: CDIP SMD
• Pin Count: 8
• Forward Transconductance (typ): 0.135S
• Drain Source Resistance (max): 4000@15Vmohm
• Input Capacitance (typ)@vds: 5.3@12.5VpF
• Output Capacitance (typ)@vds: 7.8@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 5700mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: V
2003 Sep 19
handbook, halfpage
CW, class-B
MODE OF OPERATION
mb
HF/VHF power MOS transistor
V
Fig.7
= 25 C; R
GS
(pF)
C rs
= 0; f = 1 MHz.
5
4
3
2
1
0
0
Feedback capacitance as a function of
drain-source voltage; typical values.
GS
= 237 ; unless otherwise specified.
4
DS
= 15.5 V; f = 175 MHz at rated load power.
8
(MHz)
175
f
12
V DS (V)
MGP115
12.5
V
16
(V)
DS
6
(mA)
I
20
DQ
(W)
P
2
L
typ. 13
(dB)
G
10
p
Product specification
BLF202
typ. 55
(%)
50
D