BF992T NXP Semiconductors, BF992T Datasheet - Page 5

• Manufacturer Part Number: BF992T
• Manufacturer: NXP Semiconductors

Specifications of BF992T

• Application: VHF
• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 20V
• Noise Figure (max): 1.2(Typ)dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 4@10V@Gate 1/1.7@10V@Gate 2pF
• Output Capacitance (typ)@vds: 2@10VpF
• Reverse Capacitance (typ): 0.03@10VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
handbook, halfpage
handbook, halfpage
Silicon N-channel dual gate MOS-FET
V
V
Fig.5
G2-S
DS
(mA)
(mS)
I D
|y fs |
= 10 V; T
Fig.3 Output characteristics; typical values.
= 4 V; T
24
20
16
12
30
20
10
8
4
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
j
j
= 25 C.
= 25 C.
2
V G2-S = 0 V
4
10
6
8
I D (mA)
V G1-S = 0.2 V
V DS (V)
10
0 V
0.1 V
1 V
MGE797
MGE798
0.1 V
0.2 V
0.3 V
0.4 V
0.5 V
0.6 V
Rev. 04 - 21 November 2007
12
20
5 V
4 V
3 V
2 V
handbook, halfpage
handbook, halfpage
V
V
Fig.6
DS
DS
(mA)
(mS)
I D
Fig.4 Transfer characteristics; typical values.
Y fs
= 10 V; T
= 10 V; T
30
20
10
30
20
10
0
0
1
1
Forward transfer admittance as a function
of gate 1-source voltage; typical values.
j
j
= 25 C.
= 25 C.
V G2-S = 5 V
0
0
V G1-S (V)
V G1-S (V)
Product specification
4 V 3 V
1 V
0 V
2 V
MGE799
MGE800
BF992
V G2-S =
5 of 9
1
1
5 V
4 V
3 V
2 V
1 V
0 V