H5PS1G83EFR-S6C HYNIX SEMICONDUCTOR, H5PS1G83EFR-S6C Datasheet - Page 17

• Manufacturer Part Number: H5PS1G83EFR-S6C
• Description: 58T1895
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5PS1G83EFR-S6C

• Memory Type: SDRAM
• Memory Configuration: 128M X 8
• Access Time: 15ns
• Memory Case Style: FBGA
• No. Of Pins: 60
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 1 Gbit
• Rohs Compliant: Yes

Rev. 0.4 / Nov 2008
IDD Test Conditions
(IDD values are for full operating range of Voltage and Temperature, Notes 1-5)
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
IDD7
Symbol
Operating one bank active-precharge current; t CK = t CK(IDD), t RC = t RC(IDD), t RAS = t RAS
min(IDD); CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCH-
ING;Data bus inputs are SWITCHING
Operating one bank active-read-precharge current; IOUT = 0mA;BL = 4, CL = CL(IDD), AL
= 0; t CK = t CK(IDD), t RC = t RC (IDD), t RAS = t RASmin(IDD), t RCD = t RCD(IDD); CKE is HIGH, CS
is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as
IDD4W
Precharge power-down current; All banks idle; t CK = t CK(IDD); CKE is LOW; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING
Precharge quiet standby current;All banks idle; t CK = t CK(IDD);CKE is HIGH, CS is HIGH;
Other control and address bus inputs are STABLE; Data bus inputs are FLOATING
Precharge standby current; All banks idle; t CK = t CK(IDD); CKE is HIGH, CS is HIGH; Other
control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Active power-down current; All banks open; t CK = t CK(IDD);
CKE is LOW; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
Active standby current; All banks open; t CK = t CK(IDD), t RAS = t RASmax(IDD), t RP
= t RP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus
inputs are SWITCHING; Data bus inputs are SWITCHING
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD),
AL = 0; t CK = t CK(IDD), t RAS = t RASmax(IDD), t RP = t RP(IDD); CKE is HIGH, CS is HIGH between
valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL
= CL(IDD), AL = 0; t CK = t CK(IDD), t RAS = t RASmax(IDD), t RP = t RP(IDD); CKE is HIGH, CS is
HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as
IDD4W
Burst refresh current; t CK = t CK(IDD); Refresh command at every t RFC(IDD) interval; CKE is
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCH-
ING; Data bus inputs are SWITCHING
Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL
= CL(IDD), AL = t RCD(IDD)-1* t CK(IDD); t CK = t CK(IDD), t RC = t RC(IDD), t RRD = t RRD(IDD),
t RCD = 1* t CK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are
STABLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for
detailed timing conditions
Conditions
Fast PDN Exit MR(12) = 0
Slow PDN Exit MR(12) = 1
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
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