H5PS1G83EFR-S6C HYNIX SEMICONDUCTOR, H5PS1G83EFR-S6C Datasheet - Page 20

• Manufacturer Part Number: H5PS1G83EFR-S6C
• Description: 58T1895
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5PS1G83EFR-S6C

• Memory Type: SDRAM
• Memory Configuration: 128M X 8
• Access Time: 15ns
• Memory Case Style: FBGA
• No. Of Pins: 60
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 1 Gbit
• Rohs Compliant: Yes

Rev. 0.4 / Nov 2008
Timing Patterns for 8 bank devices x16
-DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
-DDR2-533 all bins: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 D A6 RA6 D A7 RA7 D D D
-DDR2-667 all bins: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7
D D D
-DDR2-800 all bins: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7
D D D D
3.5. Input/Output Capacitance
Input/output capacitance delta, DQ, DM, DQS, DQS
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input capacitance, all other input-only pins
Input capacitance delta, CK and CK
Input capacitance, CK and CK
Parameter
Symbol
CDCK
CDIO
CCK
CDI
CIO
CI
Min
1.0
1.0
2.5
DDR2 400
DDR2 533
x
x
x
Max
0.25
0.25
2.0
2.0
4.0
0.5
Min
1.0
1.0
2.5
DDR2 667
x
x
x
Max
0.25
0.25
2.0
2.0
3.5
0.5
Min
1.0
1.0
2.5
DDR2 800
x
x
x
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
Max
0.25
1.75
0.25
2.0
3.5
0.5
Units
pF
pF
pF
pF
pF
pF
20