TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 3
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TC58NVG1S3ETA00
Manufacturer Part Number
TC58NVG1S3ETA00
Description
Manufacturer
Toshiba
Datasheet
1.TC58NVG1S3ETA00.pdf
(65 pages)
Specifications of TC58NVG1S3ETA00
Cell Type
NAND
Density
2Gb
Access Time (max)
30us
Interface Type
Serial
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC58NVG1S3ETA00
Manufacturer:
MICROCHIP
Quantity:
1 000
Company:
Part Number:
TC58NVG1S3ETA00
Manufacturer:
Toshiba
Quantity:
6 983
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
RY
V
V
V
P
T
T
T
C
C
*
SOLDER
STG
OPR
CC
IN
I/O
D
IN
OUT
SYMBOL
CLE
SYMB0L
I/O1
I/O8
ALE
/
WE
WP
to
RE
This parameter is periodically sampled and is not tested for every device.
CE
BY
Power Supply Voltage
Input Voltage
Input /Output Voltage
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
Input
Output
*(Ta = 25°C, f = 1 MHz)
Control circuit
Logic control
RY
I/O
/
BY
PARAMETER
RATING
Command register
Address register
Status register
Control circuit
3
HV generator
CONDITION
V
V
IN
OUT
= 0 V
= 0 V
− 0.6 to V
− 55 to 150
CC
− 0.6 to 4.6
− 0.6 to 4.6
VALUE
0 to 70
+ 0.3 ( ≤ 4.6 V)
MIN
260
0.3
⎯
⎯
TC58NVG1S3ETA00
Memory cell array
Column decoder
Column buffer
Data register
MAX
Sense amp
10
10
2010-05-21C
V
CC
V
SS
UNIT
UNIT
pF
pF
°C
°C
°C
W
V
V
V