TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 30

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TC58NVG1S3ETA00

Manufacturer Part Number
TC58NVG1S3ETA00
Description
Manufacturer
Toshiba
Datasheet

Specifications of TC58NVG1S3ETA00

Cell Type
NAND
Density
2Gb
Access Time (max)
30us
Interface Type
Serial
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Supplier Unconfirmed

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Table 3. Command table (HEX)
Serial Data Input
Read
Column Address Change in Serial Data Output
Read with Data Cache
Read Start for Last Page in Read Cycle with Data Cache
Auto Page Program
Column Address Change in Serial Data Input
Auto Program with Data Cache
Multi Page Program
Read for Page Copy (2) with Data Out
Auto Program with Data Cache during Page Copy (2)
Auto Program for last page during Page Copy (2)
Auto Block Erase
ID Read
Status Read
Status Read for Multi-Page Program or Multi Block Erase
Reset
Table 4. Read mode operation states
Output select
Output Deselect
H: V
IH
, L: V
IL
(Example)
CLE
L
L
HEX data bit assignment
ALE
L
L
1
8
0
7
CE
L
L
Serial Data Input: 80h
0
6
30
First Cycle
0
5
8C
8C
FF
80
00
05
31
3F
80
85
80
80
81
81
00
60
90
70
71
0
4
WE
H
H
0
3
0
2 I/O1
Second Cycle
RE
0
H
L
E0
3A
D0
30
10
15
11
15
10
15
10
High impedance
TC58NVG1S3ETA00
I/O1 to I/O8
Data output
Acceptable while Busy
2010-05-21C
Power
Active
Active

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