BLF2043.135 NXP Semiconductors, BLF2043.135 Datasheet - Page 5

• Manufacturer Part Number: BLF2043.135
• Manufacturer: NXP Semiconductors

Specifications of BLF2043.135

• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 2.2A
• Drain Source Voltage (max): 75V
• Output Power (max): 10W
• Power Gain (typ)@vds: 11.8(Min)@26VdB
• Frequency (max): 2.2GHz
• Package Type: CDIP SMD
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 11@26VpF
• Output Capacitance (typ)@vds: 9@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 33(Min)%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
2003 Feb 10
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
Impedance measured at reference planes (see Fig.7).
Fig.5
Fig.7
DS
( )
Z i
= 26 V; I
10
8
6
4
2
0
1.8
Input impedance as a function of frequency
(series components); typical values.
Measuring reference planes SOT538A.
DQ
= 25 mA; P
reference planes
L
= 10 W; T
x i
r i
2
h
25 C.
f (GHz)
MGT002
MGS999
2.2
5
handbook, halfpage
handbook, halfpage
V
Impedance measured at reference planes (see Fig.7).
Fig.6
DS
( )
Z L
= 26 V; I
6
4
2
0
2
4
6
1.8
Fig.8 Definition of transistor impedance.
Load impedance as a function of frequency
(series components); typical values.
DQ
= 25 mA; P
Z i
gate
L
= 10 W; T
2
h
R L
X L
Z L
drain
25 C.
MCE020
Product specification
f (GHz)
BLF2043
MGT001
2.2