BLF2043.135 NXP Semiconductors, BLF2043.135 Datasheet - Page 8

• Manufacturer Part Number: BLF2043.135
• Manufacturer: NXP Semiconductors

Specifications of BLF2043.135

• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 2.2A
• Drain Source Voltage (max): 75V
• Output Power (max): 10W
• Power Gain (typ)@vds: 11.8(Min)@26VdB
• Frequency (max): 2.2GHz
• Package Type: CDIP SMD
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 11@26VpF
• Output Capacitance (typ)@vds: 9@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 33(Min)%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
2003 Feb 10
handbook, full pagewidth
UHF power LDMOS transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
Fig.10 Component layout for 2 GHz class-AB test circuit.
C2
C1
C3
BLF2043 TEST CIRCUIT
BLF2043 TEST CIRCUIT
R1
C4
C5
C17
C6
BLF2043
52
8
C7
C18
C8
C16
C15
C14
C13
C12
L1
C19
L2
C9
C10
C11
r
= 2.2), thickness 0.51 mm.
MCE022
54
Product specification
BLF2043