MG400J2YS60A TOSHIBA Semiconductor CORPORATION, MG400J2YS60A Datasheet

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MG400J2YS60A

Manufacturer Part Number
MG400J2YS60A
Description
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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MG400J2YS60A
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MG400J2YS60A
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TOSHIBA
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High Power Switching Applications
Motor Control Applications
·
·
·
·
Equivalent Circuit
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
The electrodes are isolated from case.
Low thermal resistance
V
CE (sat)
MG400J2YS60A (600V/400A 2in1)
= 1.8 V (typ.)
5
6
7
4
1
2
3
Signal terminal
1.
5.
OT
G (H)
G (L)
F
F
O
O
TOSHIBA IGBT Module Silicon N Channel IGBT
2.
6.
C1
E2
F
F
O
O
(H)
(L)
3.
7.
E1/C2
E (H)
E (L)
1
4.
8.
Open
V
D
MG400J2YS60A
2002-09-06

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MG400J2YS60A Summary of contents

Page 1

... TOSHIBA IGBT Module Silicon N Channel IGBT MG400J2YS60A (600V/400A 2in1) High Power Switching Applications Motor Control Applications · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. · ...

Page 2

... Package Dimensions: 2-123C1B 1. 5. Signal Terminal Layout 2.54 Weight: 375 MG400J2YS60A Open (H) 8. Open 2002-09-06 ...

Page 3

... C V ies (on) = 300 400 off = ± 400 Symbol Test Condition = ¾ 300 (Fo MG400J2YS60A Rating Unit 600 V ±20 V 400 A 800 400 A 800 2160 150 °C -40~125 °C -20~100 °C 2500 (AC 1 min (M5) N・m Min Typ. Max = 0 ¾ ¾ +3/- ¾ ¾ 100 = 0 ¾ ...

Page 4

... Switching Time Test Circuit Timing Chart (on) Symbol Test Condition Inverter IGBT stage R th (j-c) Inverter FRD stage R With silicon compound th (c- 90 (off) 4 MG400J2YS60A Min Typ. Max ¾ ¾ 0.057 ¾ ¾ 0.068 ¾ ¾ 0.013 90% 10 2002-09-06 Unit °C/W °C/W ...

Page 5

... Please keep following condition to use fault output signal. < = 375 V V · CC 13.8 V < < = 16.0 V · GE > · G < = 50°C T · j <Gate voltage> use this product case V is less than 13.8 V, fault signal F GE must be provided higher than 13.8 V. may not be output even under error conditions MG400J2YS60A 2002-09-06 ...

Page 6

... Gate-emitter voltage V (V) GE 400 300 200 10 V 100 Collector-emitter voltage V 12 Common emitter 125° Gate-emitter voltage V 800 Common emitter 600 400 200 200 Gate-emitter voltage V 6 MG400J2YS60A I – Common emitter 125° ( – 600 A 200 A 400 ( – 25° 125°C -40° ...

Page 7

... Collector current I (A) C 500 Common emitter 0. 25°C 400 300 200 100 0 2 100 (on 100 25° 125° 400 0 7 MG400J2YS60A – 600 V 200 V VCE = 400 1000 2000 3000 4000 Charge Q (nC – off off Common emitter 300 400 25° ...

Page 8

... Collector-emitter voltage 25° 125°C 0.1 400 0 C ies C oes C res 100 1000 ( 25°C 0.1 0.01 0.001 600 0.001 (V) 8 MG400J2YS60A E – I dsw F Common cathode 300 7 25° ± 125°C 100 200 300 400 Forward current I ( – Diode stage Transistor stage ...

Page 9

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. MG400J2YS60A 9 000707EAA 2002-09-06 ...

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