GA150TS60 International Rectifier Corp., GA150TS60 Datasheet
GA150TS60
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GA150TS60 Summary of contents
Page 1
... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA150TS60U Ultra-Fast Max. 600 150 300 300 300 ±20 2500 440 230 ...
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... GA150TS60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...
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... T = 125 C J 100 V GE 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 15V Fig Typical Transfer Characteristics GA150TS60U ° ° C sink riv ifie tio 125 25V 50V = 25V CC CE 5µ ...
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... GA150TS60U 160 120 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0 . sis Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° C) Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature ular P u lse tio n ( ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 100 R = -60 -40 -20 Fig Typical Switching Losses vs. GA150TS60U = 400V = 94A 100 200 300 400 500 600 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = Ohm G2 = 15V = 360V 300 150 100 120 140 160 T , Junction Temperature ( C ) ° ...
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... GA150TS60U Ohm 150 C ° 360V 15V 100 150 200 I , Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 125 ° 25° 1.0 2.0 3.0 4 lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 250 300 Fig Reverse Bias SOA ° 5° ...
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... ° 5° / /µs) f Fig Typical Reverse Recovery vs. di www.irf.com ° 5° /dt Fig Typical Recovery Current vs GA150TS60U / /µ ...
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... GA150TS60U Fig Test Circuit for Measurement off(diode d(on Fig Test Waveforms for Circuit of Fig. 17, Defining d(on ff d(off) f Fig Test Waveforms for Circuit of Fig. 17, Defining Vce Fig Test Waveforms for Circuit of Fig. 17 µ S Vce d(off) f trr trr Irr V cc Irr Defining rec ...
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... Figure 21. Macro Waveforms for 0 - 480V Figure 22. Pulsed Collector Current www.irf.com GA150TS60U Test Circuit Figure 17's 480V @25°C C Test Circuit 9 ...
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... GA150TS60U Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M6. T For screws M5. U Pulse width 50µs; single shot. Case Outline — INT-A-PAK 80.30 [ 3.161 79.70 3.138 11 10 34.70 [ 1.366 ] 33.70 1.327 [.314] MAX. 0.15 [.0059] CONVEX 92 ...