MBN1200D33A HITACHI, MBN1200D33A Datasheet
MBN1200D33A
Manufacturer Part Number
MBN1200D33A
Description
Silicon N-Channel IGBT
Manufacturer
HITACHI
Datasheet
1.MBN1200D33A.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBN1200D33A
Manufacturer:
HITACHI
Quantity:
28
Company:
Part Number:
MBN1200D33A
Manufacturer:
HITACH
Quantity:
1 000
Part Number:
MBN1200D33A
Manufacturer:
HITACH
Quantity:
20 000
Part Number:
MBN1200D33A
Quantity:
60
Company:
Part Number:
MBN1200D33AW
Manufacturer:
HITACH
Quantity:
1 000
Part Number:
MBN1200D33AW
Quantity:
60
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Input Capacitance
Silicon N-channel IGBT
FEATURES
* High thermal fatigue durability.
* low noise due to built-in free-wheeling
*High speed,low loss IGBT module.
*Low driving power due to low input
*High reliability,high durability module.
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Notes: (1)Recommended Value 1.8±0.2/9±1N.m
CHARACTERISTICS (Tc=25
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
Notes:(3) R
diode - ultra soft fast recovery diode(USFD).
capacitance MOS gate.
IGBT MODULE
(delta Tc=70°C,N>20,000cycles)
MBN1200D33A
(4) Counter arm IGBT V
Item
Determine the suitable R
(overshoot voltage,etc.)with appliance mounted.
G
value is the test condition’s value for decision of the switching times, not recommended value.
Item
IGBT
FWD
Turn On Time
Rise Time
Fall Time
Turn Off Time
Terminals
Mounting
(M4/M8)
(M6)
GE
1ms
1ms
DC
DC
°C
=-15V
)
G
value after the measurement of switching waveforms
Symbol
Rth(j-c)
Rth(j-c)
V
V
Symbol
I
I
GE(TO)
CE(sat)
C
V
GES
t
t
CES
V
V
t
V
t
on
t
off
FM
T
ies
rr
r
I
Pc
f
I
°C
CES
GES
I
I
FM
T
Cp
ISO
stg
-
-
C
F
j
)
°C/W
Unit
mA
(2)Recommended Value 5.5±0.5N.m
nA
nF
ms
ms
V
V
V
OUTLINE DRAWING
Weight: 1,200 (g)
Unit
V
N.m
°C
°C
W
Min.
V
RMS
V
A
A
4.0
-
-
-
-
-
-
-
-
-
-
-
-
3-M4
8- 7
6-M8
Typ.
150
4.1
5.5
1.6
2.3
3.9
2.8
0.8
2.4
-
-
-
-
0.008
0.016
Max.
±500 V
12.0 V
5.0
7.0
2.6
3.2
3.2
5.6
3.7
1.4
-
C
G
E
TERMINALS
I
V
V
V
L=100nH
R
V
-Ic=1,200A,V
Vcc=1,650V,-Ic=1,200A,L=100nH,
Tc=125°C (4)
C
CE
GE
CE
CE
CC
G
GE
=1,200A,V
C
E
=3.3W
5,400(AC 1 minute)
=3,300V,V
=10V, I
=10V,V
=±20V,V
=1,650V,Ic=1,200A
=±15V Tc=125°C
MBN1200D33A
C
E
-40 ~ +125
-40 ~ +125
12,000
3,300
1,200
2,400
2,400
Test Conditions
C
1,200
GE
Junction to case
±20
GE
CE
(3)
=1,200mA
C
E
2/10
=0V,f=100KHz
GE
GE
=0V
=15V
=0V
=0V
6
PDE-N1200D33A-0
(1)
(2)
Unit in mm
Related parts for MBN1200D33A
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel Power MOS FET Module
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
High Speed Power Switching
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
8MHz V(cc): -0.3 to +7.0V V(in): -0.3 to +0.3V advanced CRT controller (ACRTC)
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
65,536-WORD x 4-BIT MULTIPORT CMOS VIDEO RAM
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
65,536-WORD x 4-BIT MULTIPORT CMOS VIDEO RAM
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
65,536-word ? 4-bit High Speed CMOS Static RAM
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
SINGLE CHIP CODEC WITH FILTERS(COMBO)
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
SINGLE CHIP CODEC WITH FILTERS(COMBO)
Manufacturer:
HITACHI
Datasheet:
MBN1200D33A Summary of contents
Page 1
... 2 0.8 rr °C/W Rth(j- Rth(j- value after the measurement of switching waveforms G Unit TERMINALS MBN1200D33A 3,300 ±20 1,200 2,400 1,200 2,400 12,000 -40 ~ +125 -40 ~ +125 5,400(AC 1 minute) 2/10 (1) 6 (2) Max. Test Conditions 12.0 V =3,300V,V = ±500 V =±20V,V = 5.0 I =1,200A,V =15V C GE 7.0 V =10V, I ...
Page 2
15V 13V 11V GE 1500 1000 500 Collector to Emitter Voltage Collector current vs. Collector to Emitter voltage 2000 125 C ...
Page 3
125 C V 1650V CC 10 0.5 Lp 100nH 15V GE Eoff(10%) Inductive Load Eoff(full) 0.0 0 500 1000 Collector Current I (A) ...
Page 4
... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi ...