BSM181R Siemens Semiconductor Group, BSM181R Datasheet

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BSM181R

Manufacturer Part Number
BSM181R
Description
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
Manufacturer
Siemens Semiconductor Group
Datasheet

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BSM181R
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Part Number:
BSM181R
Manufacturer:
SIEMENS
Quantity:
25
SIMOPAC
V
I
R
Type
BSM 181
BSM 181 R
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
Gate-source voltage
Continuous drain current,
Pulsed drain current,
Operating and storage temperature range
Power dissipation,
Thermal resistance
Chip-case
Insulation test voltage
Creepage distance, drain-source
Clearance, drain-source
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1)
2)
Semiconductor Group
D
DS
DS(on)
Power module
Single switch
N channel
Enhancement mode
Package with insulated metal base plate
Package outline/Circuit diagram: 1
See chapter Package Outline and Circuit Diagrams.
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
= 100 V
= 200 A
= 8.5 m
®
Module
T
R
C
GS
T
2)
= 25 ˚C
C
,
= 20 k
t
= 25 ˚C
Ordering Code
C67076-A1001-A2
C67076-A1016-A2
= 1 min.
T
C
= 25 ˚C
1)
57
Symbol
V
V
V
I
I
T
P
R
V
D
D puls
j
DS
DGR
GS
tot
th JC
is
,
T
stg
Values
800
800
36
144
– 55 … + 150
700
2500
16
11
F
55/150/56
20
0.18
BSM 181 R
Unit
V
A
˚C
W
K/W
V
mm
ac
BSM 181
03.96

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BSM181R Summary of contents

Page 1

SIMOPAC Module V = 100 200 8.5 m DS(on) Power module Single switch N channel Enhancement mode Package with insulated metal base plate Package outline/Circuit diagram: 1 Type Ordering Code BSM ...

Page 2

Electrical Characteristics ˚C, unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage 0. Gate threshold voltage ...

Page 3

Electrical Characteristics (cont’ ˚C, unless otherwise specified. j Parameter Reverse diode Continuous reverse drain current ˚C C Pulsed reverse drain current ˚C C Diode forward on-voltage ...

Page 4

T Characteristics ˚C, unless otherwise specified Power dissipation = ( tot T parameter: = 150 ˚ Safe operating area = ( D T parameter: single pulse ˚C, ...

Page 5

Continuous drain current parameter 150 ˚ Drain source on-state resistance DS(on) j parameter ...

Page 6

Forward characteristics of reverse diode parameter (spread Transient thermal impedance parameter Semiconductor Group ...

Page 7

Typ. gate charge = ( GS parameter 52.5 A Dpuls Semiconductor Group ) Gate 63 BSM 181 BSM 181 R ...

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