BG3230 Infineon Technologies AG, BG3230 Datasheet

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BG3230

Manufacturer Part Number
BG3230
Description
Manufacturer
Infineon Technologies AG
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BG3230E6327
Manufacturer:
INFINEON
Quantity:
27 000
DUAL N-Channel MOSFET Tetrode
BG3230
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1 For calculation of R
Type
BG3230
BG3230R
Low noise gain controlled input stages of UHF-
Two AGC amplifiers in one single package
Integrated stabilized bias network
Integrated gate protection diodes
High gain, low noise figure
Improved cross modulation at gain reduction
High AGC-range
and VHF-tuners with 5V supply voltage
thJA
BG3230R
Package
SOT363
SOT363
please refer to Application Note Thermal Resistance
1)
1=G1
1=G1
2=G2
2=S
AGC
HF
Input
1
Pin Configuration
3=D
3=D
Symbol
V
I
P
T
T
Symbol
R
D
I
V
stg
ch
DS
tot
thchs
G1/2SM
G1/G2S
G2
G1
4=D
4=D
6
GND
5=S
5=G2
-55 ... 150
5
BG3230_BG3230R
Value
Value
Drain
160
150
25
280
8
1
6
4
6=G1
6=G1
HF Output
+ DC
EHA07215
Feb-27-2004
1
VPS05604
Marking
KBs
KIs
2
Unit
V
mA
V
mW
°C
Unit
K/W
3

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BG3230 Summary of contents

Page 1

... G2 AGC G1 HF Input Pin Configuration 1=G1 2=G2 3=D 4=D 1=G1 2=S 3=D 4=D Symbol G1/2SM V G1/G2S P tot T stg T ch Symbol R thchs 1 BG3230_BG3230R VPS05604 Drain HF Output + DC GND EHA07215 Marking 5=S 6=G1 KBs 5=G2 6=G1 KIs Value Unit 160 mW °C -55 ... 150 150 ...

Page 2

... G1S G2S Gate 2 source leakage current G2S G1S DS Drain current G1S G2S Operating current (selfbiased G2S Gate2-source pinch-off voltage 100 µ Symbol V (BR) (BR)G1SS = (BR)G2SS = G1SS I G2SS = 0 I DSS = DSO V G2S(p) 2 BG3230_BG3230R Values Unit min. typ. max µ 100 µ Feb-27-2004 ...

Page 3

... G2S Noise figure (self biased 800 MHz DS G2S MHz DS G2S Gain control range 4... 800 MHz DS G2S Cross-modulation k =1 AGC = 0 dB AGC = 10 dB AGC = 40 dB Symbol g1ss C dss =50MHz, f =60MHz X unw mod 3 BG3230_BG3230R Values min. typ. max 100 - Feb-27-2004 Unit ...

Page 4

... Total power dissipation P 300 mW 200 150 100 Gate 1 forward transconductance 5V Parameter DS G2S Output characteristics I tot 120 °C 100 150 T S Drain current Parameter G2S 3. BG3230_BG3230R = ( G1S 0.4 0.8 1.2 1.6 2 Feb-27-2004 ) DS 2V 1.9V 1.8V 1.7V 1. 3. 2.8 V G1S ...

Page 5

... AGC characteristic AGC = f = 200 MHz 0 dB -20 -30 -40 -50 -60 -70 -80 -90 0 0.5 1 1.5 2 Crossmodulation AGC ) unw 120 dBµV 100 AGC characteristic AGC = G2S f = 800 MHz dB -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 - AGC 5 BG3230_BG3230R ( 0.5 1 1.5 2 2.5 Feb-27-2004 ) G2S ...

Page 6

... Cossmodulation test circuit R GEN 50 Ohm V V AGC DS 4n7 R1 2.2 µH 10 kOhm 4n7 4n7 RG1 50 Ohm BG3230_BG3230R 4n7 RL 50 Ohm Feb-27-2004 ...

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