UPA672T NEC, UPA672T Datasheet

no-image

UPA672T

Manufacturer Part Number
UPA672T
Description
50 V/100 mA FET array incorporating 2 N-ch MOSFETs
Manufacturer
NEC
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPA672T-T1
Quantity:
332
Company:
Part Number:
UPA672T-T1
Quantity:
750
Part Number:
UPA672T-T1-A
Manufacturer:
PANA
Quantity:
2 965
Part Number:
UPA672T-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
UPA672T-T1-A
0
Part Number:
UPA672T-T2
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Document No. G11259EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
with two MOS FET elements. It achieves high-density
mounting and saves mounting costs.
FEATURES
• Two MOS FET circuits in package the same size as
• Automatic mounting supported
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SC-70
The PA672T is a super-mini-mold device provided
PARAMETER
N-CHANNEL MOS FET ARRAY
SYMBOL
I
V
I
D(pulse)
V
D(DC)
T
T
P
DSS
GSS
stg
ch
T
DATA SHEET
FOR SWITCHING
A
PW
= 25 ˚C)
10 ms, Duty Cycle
MOS FIELD EFFECT TRANSISTOR
TEST CONDITIONS
PACKAGE DIMENSIONS (in millimeters)
PIN CONNECTION
50 %
6
1
6
1
0.2
0.65
5
2
2.0 ±0.2
+0.1
–0
1.3
5
2
0.65
4
3
4
3
1.
2.
3.
4.
5.
6.
Marking: MA
PA672T
–55 to +150
200 (Total)
RATINGS
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
0.15
100
200
150
50
7.0
0.9 ±0.1
+0.1
–0.05
0.7
©
(S1)
(G1)
(D2)
(S2)
(G2)
(D1)
0 to 0.1
UNIT
mW
mA
mA
˚C
˚C
V
V
1996

Related parts for UPA672T

UPA672T Summary of contents

Page 1

... Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature Document No. G11259EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET ARRAY FOR SWITCHING PACKAGE DIMENSIONS (in millimeters) PIN CONNECTION ˚C) A SYMBOL TEST CONDITIONS V DSS V GSS I ...

Page 2

ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Drain Cut-off Current I DSS Gate Leakage Current I GSS Gate Cut-off Voltage V GS(off) Forward Transfer Admittance | Drain to Source On-State Resistance R DS(on)1 Drain to Source On-State Resistance R DS(on)2 ...

Page 3

TYPICAL CHARACTERISTICS (T TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 250 200 150 100 100 T - Ambient Temperature - ˚C A TRANSFER CHARACTERISTICS 100 ˚C ...

Page 4

DRAIN TO SOURCE ON-STAGE RESISTANCE vs. GATE TO SOURCE VOLTAGE Gate to Source Voltage - V GS SWITCHING CHARACTERISTICS 100 t ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide PA672T Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...

Page 6

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance ...

Related keywords