BUK9609-75A NXP Semiconductors, BUK9609-75A Datasheet
BUK9609-75A
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BUK9609-75A Summary of contents
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... BUK9609-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... ° °C; see Figure 2 mb ≤ 50 µs pulsed °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) Rev. 03 — 22 September 2008 BUK9609-75A N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT404 Min Max - - Figure Figure 3 - 440 - ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature R DSon = D. δ Rev. 03 — 22 September 2008 BUK9609-75A www.DataSheet4U.com N-channel TrenchMOS logic level FET 03na19 50 100 150 200 T (°C) mb 03nb44 100 100 (V) 100 © NXP B.V. 2008. All rights reserved. ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9609-75A_3 Product data sheet Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board Rev. 03 — 22 September 2008 BUK9609-75A www.DataSheet4U.com N-channel TrenchMOS logic level FET Min Typ Max - - 0. 03nb45 t p δ ...
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... °C j from source lead to source bond pad ° °C; see Figure /dt = -100 A/µ - ° Rev. 03 — 22 September 2008 BUK9609-75A www.DataSheet4U.com N-channel TrenchMOS logic level FET Min Typ Max 1 500 - 0. 100 - ...
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... GS Fig 6. Gate-source threshold voltage as a function of junction temperature 03nb41 R DSon (mΩ 2 (V) Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 03 — 22 September 2008 BUK9609-75A www.DataSheet4U.com N-channel TrenchMOS logic level FET 03aa33 max typ min 0 60 120 ( ° ...
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... I D (A) Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03nb37 R DSon (mΩ 100 150 Q G (nC) Fig 12. Drain-source on-state resistance as a function of drain current; typical values Rev. 03 — 22 September 2008 BUK9609-75A www.DataSheet4U.com N-channel TrenchMOS logic level FET 175 0.0 1 ...
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... V SD (V) Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 2.4 a 1.6 0.8 0 − 120 Rev. 03 — 22 September 2008 BUK9609-75A www.DataSheet4U.com N-channel TrenchMOS logic level FET 03nb43 0 0.01 0 (V) 03nb25 180 T (°C) j © NXP B.V. 2008. All rights reserved. ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 03 — 22 September 2008 BUK9609-75A www.DataSheet4U.com N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2008. All rights reserved. ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9609-75A separated from data sheet BUK9509_9609_75A-02. BUK9509_9609_75A-02 20001106 BUK9509_9609_75A-01 20001010 ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 22 September 2008 BUK9609-75A www.DataSheet4U.com N-channel TrenchMOS logic level FET © NXP B.V. 2008. All rights reserved ...
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... NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 03 — 22 September 2008 Document identifier: BUK9609-75A_3 www.DataSheet4U.com All rights reserved. ...