BUK9616-55A NXP Semiconductors, BUK9616-55A Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9616-55A

Manufacturer Part Number
BUK9616-55A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9616-55A.pdf (9 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUK9616-55A
Manufacturer:
NXP SEMICONDUCTOR
Quantity:
30 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUK9616-55A
Manufacturer:
NXP
Quantity:
12 500
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
TO220AB and SOT404 . Using
’trench’ technology which features
very low on-state resistance. It is
intended for use in automotive and
general
applications.
PINNING
TO220AB & SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
May 2000
Philips Semiconductors
TrenchMOS
Logic level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
R
tab/mb drain
D
D
DM
V
V
DS
DGR
tot
stg
th j-mb
th j-a
th j-a
PIN
GS
GSM
1
2
3
, T
j
envelope
DESCRIPTION
gate
drain
source
purpose
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
available
transistor
switching
in
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
1
2
3
SOT404
BUK9616-55A
CONDITIONS
-
R
-
t
T
T
T
T
-
CONDITIONS
-
in free air
Minimum footprint, FR4
board
p
mb
mb
mb
mb
mb
GS
50 S
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
tab
BUK9516-55A
TO220AB
1 2 3
V
V
GS
GS
= 10 V
= 5 V
SYMBOL
TYP.
MIN.
- 55
60
50
-
-
-
-
-
-
-
-
-
g
Product specification
MAX.
138
175
55
66
16
15
MAX.
MAX.
BUK9516-55A
BUK9616-55A
263
138
175
1.1
55
55
10
15
66
46
-
-
d
s
Rev 1.000
UNIT
UNIT
K/W
K/W
K/W
UNIT
˚C
W
m
m
V
V
V
V
A
A
A
˚C
W
V
A

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BUK9616-55A Summary of contents

Page 1

... Drain-source on-state DS(ON) resistance PIN CONFIGURATION tab SOT404 TO220AB BUK9516-55A BUK9616-55A CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS - in free air Minimum footprint, FR4 board 1 Product specification BUK9516-55A BUK9616-55A MAX. UNIT 138 W 175 ˚ SYMBOL MIN. MAX. UNIT - 263 A - 138 175 ˚C TYP. ...

Page 2

... Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK9516-55A BUK9616-55A MIN. TYP. MAX. UNIT 1.5 2 ...

Page 3

... Fig.3. Safe operating area & f Zth / (K/ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0 0.001 0.000001 0.0001 140 160 180 Fig.4. Transient thermal impedance j-mb 3 Product specification BUK9516-55A BUK9616-55A MIN. TYP. MAX. UNIT - - 120 100 D. 100 ms 10 VDS / V 100 1000 = 25 ˚ single pulse; parameter ...

Page 4

... Fig.9. Typical transconductance Rds(on) normlised to 25degC 2.5 2 1 -100 = 25 ˚C. Fig.10. Normalised drain-source on-state resistance DS(ON) 4 Product specification BUK9516-55A BUK9616-55A 175 1 2 VGS / parameter 100 = 25 ˚ f(I ); conditions - 100 150 200 Tmb / degC / DS(ON)25 ˚C ...

Page 5

... WDSS% 120 110 100 Ciss 100 Fig.16. Normalised avalanche energy rating. iss oss rss f(T DSS 5 Product specification BUK9516-55A BUK9616-55A VDS= 14V VDS= 44V parameter ˚C = 175 25 0.4 0.6 0.8 1.0 1.2 1.4 VSDS parameter 100 120 140 160 180 Tmb / C ) ...

Page 6

... Philips Semiconductors TrenchMOS transistor Logic level FET L VDS VGS T.U.T. 0 RGS Fig.17. Avalanche energy test circuit 0 DSS D DSS DSS May 2000 VDD + - VGS -ID/100 shunt Fig.18. Switching test circuit Product specification BUK9516-55A BUK9616-55A VDD + RD VDS - RG T.U.T. Rev 1.000 ...

Page 7

... REFERENCES IEC JEDEC EIAJ TO-220 Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK9516-55A BUK9616-55A SOT78 ( max. 15.0 3.30 3.8 3.0 2.6 3.0 13.5 2.79 3.6 2 ...

Page 8

... Epoxy meets UL94 V0 at 1/8". May 2000 2 -PAK); 3 leads mounting base 2 scale max. 0.64 1.60 10.30 2.90 15.40 2.60 11 2.54 0.46 1.20 9.70 2.10 14.80 2.20 REFERENCES JEDEC EIAJ 8 Product specification BUK9516-55A BUK9616-55A SOT404 EUROPEAN ISSUE DATE PROJECTION 98-12-14 99-06-25 Rev 1.000 ...

Page 9

... Philips for any damages resulting from such improper use or sale. May 2000 11.5 9.0 2.0 3.8 5.08 Fig.21. SOT404 : soldering pattern for surface mounting. 9 Product specification BUK9516-55A BUK9616-55A 17.5 Rev 1.000 ...

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