UPA1900TE NEC, UPA1900TE Datasheet

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UPA1900TE

Manufacturer Part Number
UPA1900TE
Description
Manufacturer
NEC
Datasheet

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
directly by a 2.5 V power source.
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW
The PA1900 is a switching device which can be driven
The
Can be driven by a 2.5 V power source
Low on-state resistance
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on FR-4 Board, t
PA1900 features a low on-state resistance and
PA1900TE
D13809EJ1V0DS00 (1st edition)
June 1999 NS CP(K)
= 35 m
= 38 m
= 45 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
Note2
GS
GS
GS
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
6-pin Mini Mold (Thin Type)
1 %
5 sec.
D
D
D
The mark
= 3.0 A)
= 3.0 A)
= 3.0 A)
A
PACKAGE
= 25°C)
I
FOR SWITCHING
I
D(pulse)
V
V
D(DC)
T
P
P
T
DSS
GSS
DATA SHEET
stg
T1
T2
ch
shows major revised points.
–55 to +150
±5.5
MOS FIELD EFFECT TRANSISTOR
150
±12
±22
0.2
20
2
0.32
°C
°C
W
W
V
V
A
A
+0.1
–0.05
PACKAGE DRAWING (Unit : mm)
6
1
0.95
2.9 ±0.2
1.9
5
2
0.95
1, 2, 5, 6 : Drain
3
4
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
Marking: TG
4
3
©
: Gate
: Source
PA1900
0.9 to 1.1
Source
Drain
0.65
0.16
0 to 0.1
Body
Diode
1998, 1999
+0.1
–0.06

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UPA1900TE Summary of contents

Page 1

... Duty Cycle 2. Mounted on FR-4 Board, t Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

... CHANNEL TEMPERATURE 1.5 1.0 0 Channel Temperature - ˚ FORWARD BIAS SAFE OPERATING AREA 100 10 1 0.1 Single Pulse Mounted on 250mm Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board 120 150 0.01 0.1 V FORWARD TRANSFER CHARACTERISTICS 100 125˚ 0.1 0.01 0.001 ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 =125 0.01 0 Drain Current - A D DRAIN TO ...

Page 5

... SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 1 0.1 0.01 10 0.4 0 Source to Drain Voltage - V F(S-D) 12 Without Board 2 Mounted on 250mm 35 m Copper Pad Connected to Drain Electrode in 50mm 50mm 1.6mm FR-4 Board 0 100 PW - Pulse Width - s Data Sheet D13809EJ1V0DS00 PA1900 0.8 1.0 1.2 1.4 1000 5 ...

Page 6

Data Sheet D13809EJ1V0DS00 PA1900 ...

Page 7

Data Sheet D13809EJ1V0DS00 PA1900 7 ...

Page 8

... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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