GA100NA60U International Rectifier Corp., GA100NA60U Datasheet
GA100NA60U
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GA100NA60U Summary of contents
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... J T Storage Temperature Range STG Mounting Torque, 6- Screw Thermal Resistance Parameter R Junction-to-Case, IGBT JC R Thermal Resistance, Junction-to-Case , Diode JC R Case-to-Sink, Flat, Greased Surface CS Wt Weight of Module www.irf.com GA100NA60U Ultra-Fast 20kHz SOT-227 Max. 600 100 50 200 200 ± 20 2500 250 100 - 150 - 150 12 lbf • ...
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... GA100NA60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... T = 150 C J 100 10 = 15V 1 4.0 5.0 5.0 Fig Typical Transfer Characteristics 2 PULSE WIDTH 2.0 1.5 1.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature GA100NA60U ° 150 C J ° 50V CC 5µs PULSE WIDTH 6.0 7.0 8 Gate-to-Emitter Voltage ( 15V I = 100 ...
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... GA100NA60U 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 14000 1MHz ies 12000 res oes ce gc 10000 C ies 8000 6000 C oes 4000 2000 C res Collector-to-Emitter Voltage (V) CE Fig ...
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... 5 15V 480V 10 1 0.1 -60 -40 - Junction Temperature (°C) Fig Typical Switching Losses vs. Junction Temperature 1000 V = 20V 125 C J 100 10 SAFE OPERATING AREA 100 V , Collector-to-Emitter Voltage (V) CE Fig Turn-Off SOA GA100NA60U 120A 60A 30A 100 120 140 160 o 10 100 1000 5 ...
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... GA100NA60U 1000 100 10 Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 5° ° / /µ Fig Typical Reverse Recovery vs ° ° ° 0.0 0.4 0.8 1.2 1.6 2.0 F orwa rd V oltag 100A 50A 25A /dt Fig Typical Recovery Current vs 100A 50A 25A 5° ° ...
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... GE temperature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot. www.irf.com 5° ° /dt Fig Typical 5.0 (figure 19) G 0.1%. GA100NA60U 100A 50A 25A F di /dt - (A/µ /dt vs. di /dt (rec ...
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... GA100NA60U Same ty pe device as D .U.T. 430µF 80% of Vce D .U .T. Fig. 17a - Test Circuit for Measurement off(diode d(on Fig. 17c - Test Waveforms for Circuit of Fig. 17a, Defining d(on 90% 10 d(off) f d(on) Fig. 17b - Test Waveforms for Circuit of Fig. 17a, Defining ...
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... Figure 17e. Macro Waveforms for µ Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 17a's D.U. 480V Figure 19. Pulsed Collector Current GA100NA60U Test Circuit 480V @25°C C Test Circuit 9 ...
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... GA100NA60U SOT-227 Package Details Dimensions are shown in millimeters ( inches ) . Tube QUANTITIES PER TUBE SCREW AND WASHER INCLUDED IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 . . . Data and specifications subject to change without notice. ...