BSM20GD60DN2 Infineon Technologies AG, BSM20GD60DN2 Datasheet

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BSM20GD60DN2

Manufacturer Part Number
BSM20GD60DN2
Description
IGBT Power Module
Manufacturer
Infineon Technologies AG
Datasheet

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IGBT Power Module
Semiconductor Group
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 20 GD 60 DN2
BSM 20 GD 60DN2E3224
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
Pulsed collector current, t
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
GE
= 40 °C
= 40 °C
= 25 °C
= 20 k
p
= 1 ms
V
600V
600V
CE
I
20A
20A
C
1
Package
ECONOPACK 2
ECONOPACK 2K
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
55 / 150 / 56
-55 ... + 150
BSM 20 GD 60 DN2
Values
Ordering Code
C67076-A2511-A67
C67070-A2511-A67
+ 150
± 20
2500
600
600
F
20
40
90
16
11
1.6
1.8
Jan-10-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM20GD60DN2 Summary of contents

Page 1

IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM DN2 BSM 20 GD 60DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage R = ...

Page 2

Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0 CE, C Collector-emitter saturation voltage ° ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 300 Gon Rise time V = 300 ...

Page 4

Power dissipation tot C parameter: T 150 °C j 100 tot Collector current ...

Page 5

Typ. output characteristics parameter µ ° 17V 15V I 13V C 30 11V ...

Page 6

Typ. gate charge Gate parameter puls 100 Reverse biased safe ...

Page 7

Typ. switching time inductive load , T = 125° par 300 ± ...

Page 8

Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal impedance Z ...

Page 9

Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g Semiconductor Group 9 BSM DN2 Jan-10-1997 ...

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