HM628128ALP-8 HITACHI, HM628128ALP-8 Datasheet

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HM628128ALP-8

Manufacturer Part Number
HM628128ALP-8
Description
131,072-word X 8-bit High Speed CMOS Static RAM
Manufacturer
HITACHI
Datasheet

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The Hitachi HM628128A is a CMOS static RAM
organized 128 kword
density, higher performance and low power
consumption by employing 0.8 µm Hi-CMOS
process technology.
It offers low power standby power dissipation;
therefore, it is suitable for battery back-up systems.
The device, packaged in a 525-mil SOP (460-mil
body SOP) or a 600-mil plastic DIP, or a 8
mm TSOP with thickness of 1.2 mm, is available
for high density mounting. TSOP package is
suitable for cards, and reverse type TSOP is also
provided.
131,072-word 8-bit High Speed CMOS Static RAM
8 bit. It realizes higher
HM628128A Series
20
Features
• High speed
• Low power
• Single 5 V supply
• Completely static memory
• Equal access and cycle times
• Common data input and output
• Directly TTL compatible
• Capability of battery back up operation
No clock or timing strobe required
Three state output
All inputs and outputs
2 chip selection for battery back up
— Fast access time: 55/70/85/100 ns (max)
— Active: 75 mW (typ)
— Standby: 10 µW (typ)
ADE-XXX-XXX
January 1995
Rev. X

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HM628128ALP-8 Summary of contents

Page 1

... HM628128A Series 131,072-word 8-bit High Speed CMOS Static RAM The Hitachi HM628128A is a CMOS static RAM organized 128 kword 8 bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. It offers low power standby power dissipation; ...

Page 2

... HM628128ALP–10 100 ns HM628128ALP– HM628128ALP– HM628128ALP– HM628128ALP–10L 100 ns HM628128ALP–5SL 55 ns HM628128ALP–7SL 70 ns HM628128ALP–8SL 85 ns HM628128ALP–10SL 100 ns HM628128ALFP– HM628128ALFP– HM628128ALFP– HM628128ALFP–10 100 ns HM628128ALFP– HM628128ALFP– HM628128ALFP– HM628128ALFP–10L 100 ns HM628128ALFP– ...

Page 3

... Pin Arrangement HM628128ALP/ALFP Series A16 3 A14 4 A12 I/O0 14 I/ (Top View) Pin Description Pin name Function A0 – A16 Address I/O0 – I/O7 Input/output CS1 Chip select 1 CS2 Chip select 2 WE Write enable HM628128ALT Series A15 CS2 A12 12 A14 A16 10 28 ...

Page 4

HM628128A Series Block Diagram (MSB) A13 A15 A6 A7 A12 A14 A16 A5 A4 (LSB) I/O0 I/O7 CS2 CS1 WE OE Function Table CS1 OE WE CS2 ...

Page 5

Absolute Maximum Ratings Parameter Supply voltage relative Voltage on any pin relative to V Power dissipation Operating temperature Storage temperature Storage temperature under bias Note: 1. With respect –3.0 V for pulse half-width ...

Page 6

HM628128A Series DC Characteristics ( +70°C, V Parameter Symbol Input leakage current | Output leakage current |I LO Operating power supply I CC current: DC Operating power supply I CC1 current (HM628128 A-7/8/10) I CC1 ...

Page 7

AC Characteristics ( +70°C, V Test Conditions • Input pulse levels: 0 2.4 V (HM628128A-7/8/10 (HM628128A-5) • Input rise and fall times • Input and output timing reference ...

Page 8

HM628128A Series *4 Read Timing Waveform Address CS1 CS2 OE High Impedance Dout Notes and t are defined as the time at which the outputs achieve the open circuit conditions and HZ OHZ are not referred to output ...

Page 9

Write Cycle Parameter Symbol Write cycle time t WC Chip selection end of write Address setup time t AS Address valid end of write Write pulse width t WP Write recovery time t WR ...

Page 10

HM628128A Series Write Timing Waveform (1) ( Address OE CS1 CS2 * Dout Din 10 Clock Address Valid OHZ High Impedance * ...

Page 11

Write Timing Waveform (2) ( Address CS1 CS2 Dout Din Notes write occurs during the overlap of a low CS1, a high CS2, and a low WE. A write begins at the latest transition among ...

Page 12

HM628128A Series data bus contention. ≥ min + WHZ Low V Data Retention Characteristics ( +70°C) CC Parameter Symbol V for data retention Data retention current I CCDR (L ...

Page 13

Notes µA max 40˚C (L-version µA max 40˚C (L-L-version µA max 40˚C (L-SL-version). 4. CS2 controls address buffer, WE ...

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