K1516 Renesas Electronics Corporation., K1516 Datasheet

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K1516

Manufacturer Part Number
K1516
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

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K1516
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K1516 Summary of contents

Page 1

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Cautions www.DataSheet4U.com Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors ...

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... Silicon N-Channel MOS FET www.DataSheet4U.com Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (t Suitable for motor control, switching regulator, DC-DC converter Outline = 120 ns) rr TO- ADE-208-1286 (Z) 1st. Edition Mar. 2001 1 ...

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... Absolute Maximum Ratings ( Item Drain to source voltage www.DataSheet4U.com Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol 2SK1515 V DSS 2SK1516 V GSS D(pulse Pch* ...

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... Ciss — 1100 — Coss — 310 — Crss — 50 — t — 15 — d(on) t — 65 — — 95 — d(off) t — 55 — — 1.0 — — 120 — rr 2SK1515, 2SK1516 Unit Test conditions mA 100 360 400 mA ...

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... Power vs. Temperature Derating 120 www.DataSheet4U.com Case Temperature T Typical Output Characteristics Drain to Source Voltage 0.5 0.2 0.1 0.05 100 150 (° Pulse Test (V) DS Maximum Safe Operation Area 2SK1515 Ta = 25°C 2SK1516 100 300 1,000 Drain to Source Voltage V (V) DS Typical Transfer Characteristics ...

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... Case Temperature T 5 Pulse Test 2 1 0.5 0.2 0.1 0.05 20 0.5 ( Pulse Test 0.5 120 160 0.1 0.2 (°C) C 2SK1515, 2SK1516 Static Drain to Source on State Resistance vs. Drain Current Drain Current I (A) D Forward Transfer Admittance vs. Drain Current = –25°C C 25°C 75°C 0 ...

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... Body to Drain Diode Reverse Recovery Time 5,000 di/dt = 100 25°C www.DataSheet4U.com 2,000 GS Pulse Test 1,000 500 200 100 50 0.2 0 Reverse Drain Current I Dynamic Input Characteristics 500 V = 100 V DD 400 250 400 V 300 200 V = 400 V 100 DD 250 V 100 Gate Charge Qg (nc) ...

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... Reverse Drain Current vs. Source to Drain Voltage Pulse Test – 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( 100 m Pulse Width PW (s) Vout Monitor Vin 10 10% Vout (on) 2SK1515, 2SK1516 2 25°C C ch–c (t) = (t) · ch–c S ch–c = 1.25°C/ 25° Waveforms 90% 10% 90% 90 (off ...

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... Package Dimensions www.DataSheet4U.com 15.6 3.2 1.6 1.4 Max 3.6 5.45 0.5 8 4.8 0.3 0.2 2.0 1.0 0.2 0.9 1.0 5.45 0.5 Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 0.2 1.5 2.8 0.6 0.2 TO-3P — Conforms 5.0 g ...

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... Branch Office) URL : http://www.hitachi.com.hk 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. 2SK1515, 2SK1516 Colophon 2.0 9 ...

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