2SK3155 HITACHI, 2SK3155 Datasheet

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2SK3155

Manufacturer Part Number
2SK3155
Description
Power switching MOSFET
Manufacturer
HITACHI
Datasheet

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2SK3155
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Features
Outline
Low on-resistance
R
High speed switching
4 V gate drive device can be driven from 5 V source
DS
= 100 m
typ.
G
TO–220FM
Silicon N Channel MOS FET
High Speed Power Switching
D
S
2SK3155
1 2
3
1. Gate
2. Drain
3. Source
ADE-208-768C (Z)
Februaty 1999
4th. Edition

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2SK3155 Summary of contents

Page 1

... Features Low on-resistance R = 100 m typ. DS High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM G 2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C (Z) 4th. Edition Februaty 1999 1. Gate 2. Drain 3. Source ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = Electrical Characteristics ( Item Drain to source breakdown voltage V ...

Page 3

... Pulse Test (V) DS Maximum Safe Operation Area Operation in this area is limited by R DS(on 100 10 30 0.1 0 Drain to Source Voltage V Typical Transfer Characteristics Pulse Test – Gate to Source Voltage V 2SK3155 1000 300 ( ( ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 0 – Case Temperature 4 Pulse Test ( 120 160 Tc (°C) Static Drain to Source on State Resistance vs. Drain Current 1.0 0.5 0.2 ...

Page 5

... 100 Gate Charge Qg (nc) 10000 3000 1000 300 100 (A) DR 1000 20 500 200 12 100 100 0.1 0.2 2SK3155 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss MHz Drain to Source Voltage V DS Switching Characteristics µs, duty < d(off d(on) 0 Drain Current ...

Page 6

... Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin – Pulse Test 1.2 1.6 2 Monitor Maximun Avalanche Energy vs. Channel Temperature Derating duty < 0 > 100 Channel Temperature Tch (°C) Avalanche Waveform V DSS ...

Page 7

... Switching Time Test Circuit Vin Monitor D.U.T. Vin – c( (t) • ch – 4.17°C/ 25° 100 m Pulse Width PW (S) Vout Monitor R L Vin V DD Vout = 30 V td(on) 2SK3155 Tc = 25°C ch – Waveform 90% 10% 10% 10% 90% 90% td(off ...

Page 8

... Package Dimensions 10.0 ± 0.3 7.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 8 2.8 ± 0.2 2.5 ± 0.2 3.2 ± 0.2 4.45 ± 0.3 2.7 0.5 ± 0.1 Unit: mm TO– ...

Page 9

... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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