6AM12 HITACHI, 6AM12 Datasheet
6AM12
Manufacturer Part Number
6AM12
Description
Manufacturer
HITACHI
Datasheet
1.6AM12.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
6AM12
Manufacturer:
HITACHI
Quantity:
5 510
Part Number:
6AM12
Manufacturer:
HITACHI/日立
Quantity:
20 000
6AM12
Silicon N Channel/P Channel Complementary Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• Hight speed switching
• High density mounting
• Suitable for H-bridged motor driver
• Discrete packaged devices of same die
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
———————————————————————————————————————————
Gate to source voltage
———————————————————————————————————————————
Drain current
———————————————————————————————————————————
Drain peak current
———————————————————————————————————————————
Body–drain diode reverse drain current
———————————————————————————————————————————
Channel dissipation
———————————————————————————————————————————
Channel dissipation
———————————————————————————————————————————
Channel temperature
———————————————————————————————————————————
Storage temperature
———————————————————————————————————————————
*
**
N-channel: R
P-channel: R
N-channel: 2SK970 (TO-220AB),
P-channel: 2SJ172 (TO-220AB),
PW ≤ 10 µs, duty cycle ≤ 1 %
6 devices operation
I
I
2SK1093 (TO-220FM)
2SJ175 (TO-220FM)
D
D
DS
DS
= 4 A
= –4 A
(on) ≤ 0.17 Ω, V
(on) ≤ 0.2 Ω, V
GS
GS
= –10 V
= 10 V
Symbol
V
V
I
I
I
Pch (Tc =25°C)**
Pch**
Tch
Tstg
D
D(pulse)
DR
DSS
GSS
*
SP-12TA
Nch
Pch
4
2
1
Ratings
–––––––––––––––––––––
Nch
60
±20
7
28
7
42
4.8
150
–55 to +150
3
6
8
12
Pch
–60
±20
–7
–28
–7
5
1
1
2, 8, 9 : Nch Gate
3, 7,10 : Nch Drain
4, 6,11 : Pch Gate
5, 12
11
7
9
: Nch Source
: Pch Drain
: Pch Source
Unit
V
V
A
A
A
W
W
°C
°C
12
10
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6AM12 Summary of contents
Page 1
... Silicon N Channel/P Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance (on) ≤ 0.17 Ω, V N-channel (on) ≤ 0.2 Ω, V P-channel – • Capable gate drive • Low drive current • Hight speed switching • High density mounting • ...
Page 2
... Table 2 Electrical Characteristics (Ta = 25°C) (1 Unit) N channel ————————————————— Item Symbol Min ——————————————————————————————————————————— ...
Page 3
... Operation in this area is limited by R – 0 25°C – 0.1 – 0.05 – 0.1 – 0.3 30 100 Drain to Source Voltage V 6AM12 each die is identical 6 Device Operation 4 Device Operation 2 Device Operation 1 Device Operation 50 75 100 125 150 (P-channel (on) DS – ...