P28F010-150 Intel Corporation, P28F010-150 Datasheet

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P28F010-150

Manufacturer Part Number
P28F010-150
Description
28F010 1024K (128K X 8) CMOS FLASH MEMORY P28F010-1501024K (128K x 8) CMOS FLASH MEMORY
Manufacturer
Intel Corporation
Datasheet

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Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write
random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket on-
board during subassembly test in-system during final test and in-system after-sale The 28F010 increases
memory flexibility while contributing to time and cost savings
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131 072 bytes of 8 bits Intel’s 28F010 is
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages Pin assignments conform to JEDEC
standards for byte-wide EPROMs
Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process
technology Advanced oxide processing an optimized tunneling structure and lower electric field combine to
extend reliable cycling beyond that of traditional EEPROMs With the 12 0V V
100 000 erase and program cycles well within the time limits of the Quick Pulse Programming and Quick Erase
algorithms
Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds low
power consumption and immunity to noise Its 65 nanosecond access time provides no-WAIT-state perform-
ance for a wide range of microprocessors and microcontrollers Maximum standby current of 100 mA trans-
lates into power savings when the device is deselected Finally the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins from
With Intel’s ETOX process base the 28F010 builds on years of EPROM experience to yield the highest levels
of quality reliability and cost-effectiveness
Flash Electrical Chip-Erase
Quick Pulse Programming Algorithm
100 000 Erase Program Cycles
12 0V
High-Performance Read
CMOS Low Power Consumption
Integrated Program Erase Stop Timer
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT
Other brands and names are the property of their respective owners
1 Second Typical Chip-Erase
10 ms Typical Byte-Program
2 Second Chip-Program
65 ns Maximum Access Time
10 mA Typical Active Current
50 mA Typical Standby Current
0 Watts Data Retention Power
g
5% V
INTEL CORPORATION 1995
1024K (128K x 8) CMOS FLASH MEMORY
PP
b
1V to V
CC
a
28F010
1V
November 1995
Y
Y
Y
Y
Y
Command Register Architecture for
Microprocessor Microcontroller
Compatible Write Interface
Noise Immunity Features
ETOX
JEDEC-Standard Pinouts
(See Packaging Spec Order
Extended Temperature Options
Maximum Latch-Up Immunity
through EPI Processing
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
g
10% V
TM
Nonvolatile Flash Technology
CC
PP
Tolerance
supply the 28F010 performs
231369)
Order Number 290207-010

P28F010-150 Summary of contents

Page 1

... Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata COPYRIGHT INTEL CORPORATION 1995 28F010 Command Register Architecture for ...

Page 2

Figure 1 28F010 Block Diagram Symbol Type A – A INPUT ADDRESS INPUTS for memory addresses Addresses are internally 0 16 latched during a write cycle DQ – DQ INPUT OUTPUT DATA INPUT OUTPUT Inputs data during memory write ...

Page 3

Figure 2 28F010 Pin Configurations 28F010 290207 – 3 290207 – 17 290207 – ...

Page 4

APPLICATIONS The 28F010 flash memory provides nonvolatility along with the capability to perform over 100 000 electrical chip-erasure reprogram cycles These fea- tures make the 28F010 an innovative alternative to disk EEPROM and battery-backed static RAM Where periodic updates ...

Page 5

Figure 3 TSOP Serpentine Layout 28F010 5 ...

Page 6

Figure 4 28F010 in a 80C186 System PRINCIPLES OF OPERATION Flash-memory augments EPROM functionality with in-circuit electrical erasure and reprogramming The 28F010 introduces a command register to manage this new functionality The command register allows for 100% TTL-level control ...

Page 7

Table 2 28F010 Bus Operations Mode Read Output Disable Standby READ-ONLY Intelligent Identifier (Mfr) Intelligent Identifier (Device) Read Output Disable READ WRITE (5) Standby Write NOTES e 1 Refer to DC Characteristics When Manufacturer and device codes ...

Page 8

With CE and logic low level raising A9 to high voltage V (see DC Characteristics) acti- ID vates the operation Data read from locations 0000H and 0001H represent the manufacturer’s code and the device code respectively ...

Page 9

Read Command While V is high for erasure and programming PP memory contents can be accessed via the read command The read operation is initiated by writing 00H into the command register Microprocessor read cycles retrieve array data The device ...

Page 10

Program-Verify Command The 28F010 is programmed on a byte-by-byte basis Byte programming may occur sequentially or at ran- dom Following each programming operation the byte just programmed must be verified The program-verify operation is initiated by writing C0H into ...

Page 11

NOTES 1 See DC Characteristics for the value PPL 2 Program Verify is only performed after byte program- ming A final read compare may be performed (option- al) after the register is written with the Read command ...

Page 12

See DC Characteristics for the value PPL 2 Erase Verify is performed only after chip-erasure A final read compare may be performed (optional) after the register is written with the read command Figure 6 28F010 ...

Page 13

DESIGN CONSIDERATIONS Two-Line Output Control Flash-memories are often used in larger memory ar- rays Intel provides two read-control inputs to ac- commodate multiple memory connections Two-line control provides for a the lowest possible memory power dissipation and b complete assurance ...

Page 14

ABSOLUTE MAXIMUM RATINGS Operating Temperature During Read During Erase Program Operating Temperature b During Read During Erase Program Temperature Under Bias ...

Page 15

DC CHARACTERISTICS TTL NMOS COMPATIBLE Commercial Products (Continued) Symbol Parameter I V Programming Current CC2 Erase Current CC3 Program Verify Current CC4 Erase Verify Current CC5 Leakage Current ...

Page 16

DC CHARACTERISTICS CMOS COMPATIBLE Commercial Products Symbol Parameter Notes I V Programming Current 1 2 CC2 Erase Current 1 2 CC3 Program Verify Current 1 2 CC4 Erase Verify Current ...

Page 17

DC CHARACTERISTICS TTL NMOS COMPATIBLE Extended Temperature Products Symbol Parameter I Input Leakage Current LI I Output Leakage Current Standby Current CCS Active Read Current CC1 Programming Current CC2 CC I ...

Page 18

DC CHARACTERISTICS CMOS COMPATIBLE Extended Temperature Products Symbol Parameter Notes I Input Leakage 1 LI Current I Output Leakage 1 LO Current I V Standby 1 CCS CC Current I V Active Read 1 CC1 CC Current I V ...

Page 19

DC CHARACTERISTICS CMOS COMPATIBLE Extended Temperature Products (Continued) Symbol Parameter Notes V V during Read-Only PPL PP Operations V V during Read Write PPH PP Operations V V Erase Write Lock LKO CC Voltage e e CAPACITANCE ...

Page 20

AC TESTING INPUT OUTPUT (1) WAVEFORM AC test inputs are driven TTL ‘‘1’’ and for a Logic ‘‘0’’ Input timing OL TTL begins ...

Page 21

AC CHARACTERISTICS Read Only Operations Commercial and Extended Temperature Products 28F010 21 ...

Page 22

Figure 7 AC Waveforms for Read Operations 22 ...

Page 23

AC CHARACTERISTICS Write Erase Program Only Operations Commercial and Extended Temperature Products 28F010 (1) 23 ...

Page 24

Figure 8 Typical Programming Capability Figure 9 Typical Program Time at 12V 24 290207 – 13 Figure 10 Typical Erase Capability 290207 – 14 Figure 11 Typical Erase Time at 12V 290207 – 15 290207 – 16 ...

Page 25

Figure 12 AC Waveforms for Programming Operations 28F010 25 ...

Page 26

Figure 13 AC Waveforms for Erase Operations 26 ...

Page 27

AC CHARACTERISTICS Alternative CE -Controlled Writes Commercial and Extended Temperature 28F010 27 ...

Page 28

ERASE AND PROGRAMMING PERFORMANCE Parameter Notes Chip Erase Time Chip Program Time NOTES 1 ‘‘Typicals’’ are not guaranteed but based on samples from production lots Data taken ...

Page 29

NOTE Alternative CE -Controlled Write Timings also apply to erase operations Figure 14 Alternate AC Waveforms for Programming Operations 28F010 29 ...

Page 30

... ORDERING INFORMATION VALID COMBINATIONS P28F010-65 P28F010-90 P28F010-120 P28F010-150 E28F010-65 E28F010-90 E28F010-120 E28F010-150 ADDITIONAL INFORMATION ER-20 ‘‘ETOX Flash Memory Technology’’ ER-24 ‘‘Intel Flash Memory’’ ER-28 ‘‘ETOX III Flash Memory Technology’’ RR-60 ‘‘ETOX Flash Memory Reliability Data Summary’’ ...

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