HM62W4100HJP-12 HITACHI, HM62W4100HJP-12 Datasheet

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HM62W4100HJP-12

Manufacturer Part Number
HM62W4100HJP-12
Description
4M high speed SRAM (1-Mword x 4-bit), 12ns access time
Manufacturer
HITACHI
Datasheet

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Description
The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed
circuit designing technology. It is most appropriate for the application which requires high speed and high
density memory, such as cache and buffer memory in system. The HM62W4100H is packaged in 400-mil
32-pin SOJ for high density surface mounting.
Features
Single supply : 3.3 V 0.3 V
Access time 12/15 ns (max)
Completely static memory
Equal access and cycle times
Directly TTL compatible
Operating current : 180/160 mA (max)
TTL standby current : 60/50 mA (max)
CMOS standby current : 5 mA (max)
Data retension current : 0.6 mA (max) (L-version)
Data retension voltage: 2 V (min) (L-version)
Center V
No clock or timing strobe required
All inputs and outputs
CC
and V
4M High Speed SRAM (1-Mword 4-bit)
SS
type pinout
HM62W4100H Series
: 1 mA (max) (L-version)
4-bit. It has realized high
ADE-203-774D (Z)
Sep. 15, 1998
Rev. 1.0

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HM62W4100HJP-12 Summary of contents

Page 1

HM62W4100H Series 4M High Speed SRAM (1-Mword 4-bit) Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It ...

Page 2

... HM62W4100H Series Ordering Information Type No. HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Pin Arrangement 2 Access time Package 12 ns 400-mil 32-pin plastic SOJ (CP-32DB HM62W4100HJP/HLJP Series I/ I/ (Top view) A19 A18 A17 A16 A15 OE I/ I/O3 A14 A13 A12 A11 A10 NC ...

Page 3

Pin Description Pin name Function A0 to A19 Address input I/O1 to I/O4 Data input/output CS Chip select OE Output enable WE Write enable V Power supply CC V Ground connection Block Diagram (LSB) A1 A17 A7 ...

Page 4

HM62W4100H Series Operation Table Note Absolute Maximum Ratings Parameter Supply voltage relative Voltage on any pin relative ...

Page 5

DC Characteristics ( + Parameter Input leakage current Output leakage current Operation power 12 ns cycle I supply current 15 ns cycle I Standby power supply 12 ns cycle I current 15 ns cycle I ...

Page 6

HM62W4100H Series AC Characteristics ( + Test Conditions Input pulse levels: 3.0 V/0.0 V Input rise and fall time Input and output timing reference levels: 1.5 V Output load: See figures (Including scope ...

Page 7

Write Cycle Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width Address setup time Write recovery time Data to write time overlap Data hold from write time Write disable to ...

Page 8

HM62W4100H Series Timing Waveforms Read Timing Waveform (1) ( Address CS OE High Impedance Dout Read Timing Waveform (2) ( Address Dout Valid address ACS ...

Page 9

Read Timing Waveform (3) ( CLZ High Dout Impedance Write Timing Waveform (1) (WE Controlled) Address WE* Dout Din , ...

Page 10

HM62W4100H Series Write Timing Waveform (2) (CS Controlled) Address Dout Din Valid address WHZ High impedance ...

Page 11

Low V Data Retention Characteristics ( + This characteristics is guaranteed only for L-version. Parameter Symbol V for data retention Data retention current I CCDR Chip deselect to data t CDR retention ...

Page 12

... HM62W4100H Series Package Dimensions HM62W4100HJP/HLJP Series (CP-32DB 1.30 Max 0.43 0.10 0.41 0.08 Dimension including the plating thickness Base material dimension 12 20.71 21.08 Max 17 16 0.74 1.27 0.10 9.40 0.25 Hitachi Code CP-32DB JEDEC Conforms EIAJ Conforms Weight (reference value) 1.2 g ...

Page 13

... Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics ...

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