HY57V161610ET-8 Hynix Semiconductor, HY57V161610ET-8 Datasheet

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HY57V161610ET-8

Manufacturer Part Number
HY57V161610ET-8
Description
Manufacturer
Hynix Semiconductor
Datasheet

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DESCRIPTION
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic appli-
cations which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.
HY57V161610E is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized
with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output
voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 1,2 or 3), the number of consecutive read or write cycles initi-
ated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A
burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a
new burst read or write command on any cycle. (This pipeline design is not restricted by a `2N` rule.)
FEATURES
ORDERING INFORMATION
Note :
1. V
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for
use of circuits described. No patent licenses are implied
Rev. 0.2 / Aug. 2003
HY57V161610ET-5
HY57V161610ET-55
HY57V161610ET-6
HY57V161610ET-7
HY57V161610ET-8
HY57V161610ET-10
HY57V161610ET-15
DD
Single 3.0V to 3.6V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin
pitch
All inputs and outputs referenced to positive edge of system
clock
Data mask function by UDQM/LDQM
Internal two banks operation
(min) of HY57V161610ET-5/55 is 3.15V
Part No.
Clock Frequency
200MHz
183MHz
166MHz
143MHz
125MHz
100MHz
66MHz
2 Banks x 512K x 16 Bit Synchronous DRAM
2Banks x 512Kbits x 16
Organization
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
Programmable CAS Latency ; 1, 2, 3 Clocks
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
Interface
LVTTL
HY57V161610E
50pin TSOP II
Package
400mil
1

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HY57V161610ET-8 Summary of contents

Page 1

... Internal two banks operation ORDERING INFORMATION Part No. HY57V161610ET-5 HY57V161610ET-55 HY57V161610ET-6 HY57V161610ET-7 HY57V161610ET-8 HY57V161610ET-10 HY57V161610ET-15 Note : 1. V (min) of HY57V161610ET-5/55 is 3.15V DD This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied Rev ...

Page 2

PIN CONFIGURATION ...

Page 3

FUNCTIONAL BLOCK DIAGRAM 1Mx16 Synchronous DRAM Self Refresh Counter Refresh Interval Timer Address[0:10] CLK Precharge CKE Row Active BA(A11) Column Active CS RAS CAS WE UDQM LDQM Mode Register Rev. 0.2 / Aug. 2003 Refresh Counter Sense AMP & I/O ...

Page 4

... Output load capacitance for access time measurement Note : 1. Output load to measure access times is equivalent to two TTL gates and one capacitance(30pF). For details, refer to AC/DC output load circuit (min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns (min) of HY57V161610ET-5/55 is 3.15V‘ DD Rev. 0.2 / Aug. 2003 ...

Page 5

... Input leakage current IL Output leakage current IO Output high voltage V OH Output low voltage V OL Note : 1.V (min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns. DD 2.V (min) of HY57V161610ET-5/55 is 3.15V DD 3 3.6V, All other pins are not under test = 0V IN 4.D is disabled 3.6V OUT OUT Rev ...

Page 6

... All banks active Auto Refresh Current IDD5 Self Refresh Current IDD6 CKE Note : 1.V (min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns. DD 2.V (min) of HY57V161610ET-5/55 is 3.15V DD 3.I and I depend on output loading and cycle rates. Specified values are measured with the output open. ...

Page 7

AC CHARACTERISTICS Parameter Symbol CL=3 tCK3 System clock CL=2 tCK2 cycle time CL=1 tCK1 Clock high pulse width tCHW Clock low pulse width tCLW CL=3 tAC3 Access time CL=2 tAC2 from clock CL=1 tAC1 Data-out hold time tOH Data-Input setup ...

Page 8

... Note : 1.V (min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns. DD 2.V (min) of HY57V161610ET-5/55 is 3.15V DD 3.tCK2 is 8.9ns only when tAC2 is 7.9ns in HY57V161610ET-6 and HY57V161610ET-7. 4.Assume (input rise and fall time ) is 1ns. Rev. 0.2 / Aug. 2003 (TA=0°C to 70°C, V =3.0V to 3.6V ...

Page 9

AC CHARACTERISTICS Paramter Symbol Operation RAS cycle time Auto Refresh RAS to CAS delay RAS active time RAS precharge time RAS to RAS bank active delay CAS to CAS bank active delay Write command to data-in delay Data-in to precharge ...

Page 10

... Precharge to data output Hi-Z Power down exit time Self refresh exit time Refresh Time - Note : 1. V (min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns. DD 2.V (min) of HY57V161610ET-5/55 is 3.15V new command can be given tRRC after self refresh exit. DEVICE OPERATING OPTION TABLE ...

Page 11

... HY57V161610ET-6 CAS Latency 166MHz 3CLKs 143MHz 3CLKs 125MHz 3CLKs HY57V161610ET-7 CAS Latency 143MHz 3CLKs 125MHz 3CLKs 100MHz 2CLKs HY57V161610ET-8 CAS Latency 125MHz 3CLKs 100MHz 3CLKs 83MHz 2CLKs HY57V161610ET-10 CAS Latency 100MHz 3CLKs 83MHz 2CLKs HY57V161610ET-15 CAS Latency 66MHz 1CLKs Rev ...

Page 12

COMMAND TRUTH TABLE Command Mode Register Set No Operation Bank Active Read Read with Auto precharge Write Write with Auto precharge Precharge All Bank Precharge selected Bank Burst Stop U/LDQM Auto Refresh Burst-READ-Single-WRITE Entry 1 Self Refresh Exit Entry Precharge ...

Page 13

PACKAGE INFORMATION 400mil 50pin Thin Small Outline Package (TC) 1Mx16 Synchronous DRAM 1.2(0.0472) 1.0(0.0394) 0.646 REF GAGE PLANE 0~5deg Rev. 0.2 / Aug. 2003 10.262(0.4040) 10.059(0.3960) 0.45(0.0177) 0.8(0.0315 BSC) 0.30(0.0118) 21.057(0.8290) 20.879(0.8220) 0.210(0.0083) 0.597(0.0235) 0.120(0.0118) 0.406(0.0160) HY57V161610E UNIT : mm(inch) ...

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