TB28F008SA-100 Intel Corporation, TB28F008SA-100 Datasheet
TB28F008SA-100
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TB28F008SA-100 Summary of contents
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... Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata COPYRIGHT INTEL CORPORATION 1995 28F008SA MEMORY ...
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PRODUCT OVERVIEW The 28F008SA is a high-performance 8-Mbit (8 388 608 bit) memory organized as 1 Mbyte (1 048 576 bytes bits each Sixteen 64-Kbyte (65 536 byte) blocks are included on the 28F008SA A memory map ...
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Figure 1 Block Diagram 28F008SA 3 ...
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Symbol Type A – A INPUT ADDRESS INPUTS for memory addresses Addresses are internally 0 19 latched during a write cycle DQ – DQ INPUT OUTPUT DATA INPUT OUTPUTS Inputs data and commands during Command 0 7 User Interface ...
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Standard Pinout Reverse Pinout Figure 2 TSOP Lead Configurations 28F008SA 290429 – 2 290429 – ...
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Figure 3 TSOP Serpentine Layout NOTE 1 Connect all V and GND pins of each device to common power supply outputs DO NOT leave V CC disconnected 6 or GND inputs CC ...
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Figure 4 PSOP Lead Configuration 28F008SA 290429 – ...
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Figure 5 28F008SA Array Interface to Intel386SL Microprocessor Superset through PI Bus (Including RY BY Masking and Selective Powerdown) for DRAM Backup during System SUSPEND Resident O S and Applications and Motherboard Solid-State Disk 8 290429 – 5 ...
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PRINCIPLES OF OPERATION The 28F008SA includes on-chip write automation to manage write and erase functions The Write State Machine allows for 100% TTL-level control inputs fixed power supplies during block erasure and byte write and minimal processor overhead with RAM- ...
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Data Protection Depending on the application the system designer may choose to make the V power supply switcha- PP ble (available only when memory byte writes block erases are required) or hardwired memory contents ...
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Deep Power-Down The 28F008SA offers a deep power-down feature entered when Current draw thru typical in deep power-down mode with current draw through V typically During PP ...
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Write Writes to the Command User Interface enable read- ing of device data and Intelligent Identifiers They also control inspection and clearing of the Status e Register Additionally when PPH mand User Interface controls block erasure ...
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Intelligent Identifier Command The 28F008SA contains an Intelligent Identifier op- eration initiated by writing 90H into the Command User Interface Following the command write a read cycle from address 00000H retrieves the manufac- turer code of 89H A read cycle ...
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Byte Write Setup Write Commands (40H or 10H) Byte write is executed by a two-command sequence The Byte Write Setup command (40H or 10H) is writ- ten to the Command User Interface followed by a second write specifying the ...
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RY BY and Byte Write Block Erase Polling full CMOS output that provides a hard- ware method of detecting byte write and block erase completion It transitions low time t write or erase command sequence is ...
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FULL STATUS CHECK PROCEDURE Figure 8 Automated Block Erase Flowchart 16 Bus Command Operation Write Erase Setup Write Erase Standby Read Repeat for subsequent bytes Full status check can be done after each block or after ...
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Figure 9 Erase Suspend Resume Flowchart Power Supply Decoupling Flash memory power switching characteristics re- quire careful device decoupling System designers are interested in 3 supply current issues standby current levels (I ) active current levels (I SB transient peaks ...
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Transitions and the CC PP Command Status Registers Byte write and block erase completion are not guar- anteed if V drops below V If the V PP PPH of the Status Register ( set ...
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ABSOLUTE MAXIMUM RATINGS Operating Temperature During Read During Block Erase Byte Write b Temperature Under Bias Storage Temperature Voltage on Any Pin (except V and ...
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DC CHARACTERISTICS (Continued) Symbol Parameter I V Byte Write Current CCW Block Erase Current CCE Erase Suspend Current CCES Standby Current PPS Deep PowerDown PPD PP Current ...
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EXTENDED TEMPERATURE OPERATING CONDITIONS Symbol Parameter T Operating Temperature Supply Voltage (10 Supply Voltage (5 CHARACTERISTICS EXTENDED TEMPERATURE OPERATION Symbol Parameter I Input Load Current LI I Output Leakage Current ...
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DC CHARACTERISTICS EXTENDED TEMPERATURE OPERATION Symbol Parameter V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH1 (TTL) V Output High Voltage OH2 (CMOS during Normal PPL ...
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AC INPUT OUTPUT REFERENCE WAVEFORM AC test inputs are driven for a Logic ‘‘1’’ and V OH TTL ‘‘0’’ Input timing begins and V IH TTL IL k ...
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EXTENDED TEMPERATURE OPERATION AC CHARACTERISTICS Read-Only Operations Versions Symbol Parameter t t Read Cycle Time AVAV Address to Output Delay AVQV ACC Output Delay ELQV High to Output ...
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Figure 10 AC Waveform for Read Operations 28F008SA 25 ...
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AC CHARACTERISTICS Write Operations Versions Symbol Parameter t t Write Cycle Time AVAV High Recovery to PHWL PS WE Going Low Setup to WE Going ELWL CS Low Pulse ...
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BLOCK ERASE AND BYTE WRITE PERFORMANCE Parameter Notes Block Erase Time Block Write Time Byte Write Time NOTES Excludes System-Level Overhead 3 Contact your Intel representative for information on the maximum byte ...
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EXTENDED TEMPERATURE OPERATION BLOCK ERASE AND BYTE WRITE PERFORMANCE Parameter Block Erase Time Block Write Time Byte Write Time NOTES Excludes System-Level Overhead 3 Contact your Intel representative for information on ...
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Figure 11 AC Waveform for Write Operations 28F008SA 29 ...
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ALTERNATIVE CE -CONTROLLED WRITES Versions Symbol Parameter t t Write Cycle Time AVAV High Recovery to PHEL PS CE Going Low Setup to CE Going WLEL WS Low Pulse ...
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EXTENDED TEMPERATURE OPERATION ALTERNATIVE CE -CONTROLLED WRITES Versions Symbol Parameter t t Write Cycle Time AVAV High Recovery to CE PHEL Setup to CE Going Low WLEL Pulse ...
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Figure 12 Alternate AC Waveform for Write Operations 32 ...
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... ER-28 ‘‘ETOX TM III Flash Memory Technology’’ REVISION HISTORY Number 002 004 005 TE28F008SA-100 TB28F008SA-100 TF28F008SA-100 Product Specification’’ TM Description Revised from Advanced Information to Preliminary Modified Erase Suspend Flowchart Removed -90 speed bin Integrated -90 characteristics into -85 speed bin Combined V ...