IRF7307TR International Rectifier Corp., IRF7307TR Datasheet
IRF7307TR
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IRF7307TR Summary of contents
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Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible ...
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IRF7307 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V B OTTOM 1. 20µ 1 ° ...
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IRF7307 150° 25° Sour ce-to-Dr ain Voltage ( V) SD Fig 7. Typical ...
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VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V B OTTOM - 1 -1.5 V 20µ ...
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IRF7307 150° Sour ce-to-Drain V oltage (V) SD Fig 18. Typical Source-Drain Diode Forward Voltage 5.0 ...
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D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient N & P-Channel 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7307 P ...
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IRF7307 D.U Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Reverse Recovery Current Re-Applied Voltage *** Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations - ** dv/dt ...
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Package Outline SO-8 Outline Dimensions are shown in millimeters (inches 0.25 (.010 ...
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IRF7307 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) T ERM INAT DIR ECT IO N 330.00 ( 13.000) MAX . ...