PTB20038 Advanced Semiconductor, Inc., PTB20038 Datasheet

PTB20038

Manufacturer Part Number

PTB20038

Description

Manufacturer

Advanced Semiconductor, Inc.

Datasheet

1.PTB20038.pdf (2 pages)

Current page: 1 of 2
Download datasheet (23Kb)

CHARACTERISTICS

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200

DESCRIPTION:

The

General Purpose Class AB Power

Amplifier Applications up to 900 MHz.

FEATURES:

MAXIMUM RATINGS

Omnigold™ Metalization System

SYMBOL

25 W, 860-900 MHz

Silicon Nitride Passivated

DISS

STG

ASI PTB20038

CEO

CES

EBO

NPN SILICON RF POWER TRANSISTOR

65 W @ T

-40 °C to +150 °C

= 100 mA

= 5.0 mA

2.7 °C/W

= 5.0 V

= 25 V

6.7 A

50 V

is Designed for

NONETEST CONDITIONS

= 25 °C

OUT

= 1.0 A

Specifications are subject to change without notice.

= 25 W

= 10 W

f = 900 MHz

1 = COLLECTOR

PACKAGE STYLE .400 6L FLG

MINIMUM TYPICAL MAXIMUM

FAX (818) 765-3004

3.5

9.0

2 = BASE

3,4,5,6 = EMITTER

PTB20038

30:1

100

UNITS

REV. A

---

1/2

Related parts for PTB20038

PTB20038 Summary of contents

Page 1

... NPN SILICON RF POWER TRANSISTOR DESCRIPTION: ASI PTB20038 The is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES 860-900 MHz Silicon Nitride Passivated Omnigold™ Metalization System MAXIMUM RATINGS 6 °C C DISS T -40 °C to +150 °C J -40 ° ...

Page 2

7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 ERROR! REFERENCE SOURCE NOT FOUND. FAX (818) ...

Related keywords

PTB20038 datasheet
PTB20038 data sheet
PTB20038 pdf datasheet
PTB20038 component
PTB20038 part
PTB20038 distributor
PTB20038 RoHS
PTB20038 datasheet download