MX29L1611MC-10 Macronix International Co., MX29L1611MC-10 Datasheet
MX29L1611MC-10
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MX29L1611MC-10 Summary of contents
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FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read(MX29L1611-75/10/12) • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns. • Full voltage range 2.7 to 3.6V write, erase and read (MX29L1611-90) • Fast random access/page mode ...
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PIN CONFIGURATIONS 44 SOP(500mil A19 A18 A17 A10 A11 A12 A4 37 A13 A14 A2 10 ...
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BLOCK DIAGRAM CONTROL WE INPUT OE LOGIC WP BYTE ADDRESS LATCH Q15/A-1 A0-A19 AND BUFFER Q0-Q15/A-1 P/N:PM0511 MX29L1611 PROGRAM/ERASE HIGH VOLTAGE MX29L1611 FLASH ARRAY ARRAY SOURCE HV Y-PASS GATE PGM SENSE DATA AMPLIFIER HV Y-select PROGRAM DATA LATCH I/O BUFFER ...
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Table1.PIN DESCRIPTIONS SYMBOL TYPE A0 - A19 INPUT INPUT/OUTPUT Q8 - Q14 INPUT/OUTPUT Q15/A -1 INPUT/OUTPUT CE INPUT OE INPUT WE INPUT WP INPUT BYTE INPUT VCC GND P/N:PM0511 NAME AND FUNCTION ADDRESS INPUTS: for memory addresses. ...
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BUS OPERATION Flash memory reads, erases and writes in-system via the local CPU . All bus cycles to or from the flash memory conform to standard microprocessor bus cycles. Table 2.1 Bus Operations for Word-Wide Mode (BYTE = VIH) Mode ...
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WRITE OPERATIONS Commands are written to the COMMAND INTERFACE REGISTER (CIR) using standard microprocessor write timings. The CIR serves as the interface between the microprocessor and the internal chip operation. The CIR can decipher Read Array, Read Silicon ID, Erase ...
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TABLE 3. COMMAND DEFINITIONS Command Sector Sequence Protection Bus Write 6 Cycles Req'd First Bus Addr 5555H Write Cycle Data AAH Second Bus Addr 2AAAH Write Cycle Data 55H Third Bus Addr 5555H Write Cycle Data 60H Fourth Bus Addr ...
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DEVICE OPERATION SILICON ID READ The Silicon ID Read mode allows the reading out of a binary code from the device and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose ...
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READ/RESET COMMAND The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the CIR contents are altered ...
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If a high to low transition not detected whithin 100us of the last low to high transition, the load period will end and ...
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READ STATUS REGISTER The MXIC's 16 Mbit flash family contains a status register which may be read to determine when a program or erase operation is complete, and whether that operation completed successfully. The status register may be read at ...
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TABLE 6. MX29L1611 STATUS REGISTER STATUS IN PROGRESS PROGRAM ERASE SUSPEND (NOT COMPLETE) (COMPLETE) COMPLETE PROGRAM ERASE FAIL PROGRAM ERASE AFTER CLEARING STATUS REGISTER NOTES: 1. DQ7 : WRITE STATE MACHINE STATUS 1 = READY BUSY DQ6 : ...
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HARDWARE SECTOR PROTECTION The MX29L1611 features sector protection. This feature will disable both program and erase operations in either the top or the bottom sector (0 or 31). The sector protection feature is enabled using system software by the user(Refer ...
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DATA PROTECTION The MX29L1611 is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine in the Read ...
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Figure 1. AUTOMATIC PAGE PROGRAM FLOW CHART Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data A0H Address 5555H Write Program Data/Address Read Status Register Page Program Completed YES another page? Operation Done, Device Stays At Read ...
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Figure 2. AUTOMATIC CHIP ERASE FLOW CHART START Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 80H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 10H Address 5555H Read Status ...
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Figure 3. AUTOMATIC SECTOR ERASE FLOW CHART START Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 80H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 30H Sector Address Read Status ...
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Figure 4. ERASE SUSPEND/ERASE RESUME FLOW CHART START Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data B0H Address 5555H Read Status Register SR7 = 1 ? YES SR6 = 1 ? YES Erase Suspend Write Data ...
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ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS RATING Ambient Operating Temperature Storage Temperature Applied Input Voltage Applied Output Voltage VCC to Ground Potential A9 CAPACITANCE TA = 25° ° ° ° ° 1.0 MHz SYMBOL PARAMETER CIN Input Capacitance ...
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DC CHARACTERISTICS Vcc = 3.0V ~ 3.6V SYMBOL PARAMETER IIL Input Load Current ILO Output Leakage Current ISB1 VCC Standby Current(CMOS) ISB2 VCC Standby Current(TTL) ICC1 VCC Read Current ICC2 VCC Erase Suspend Current ICC3 VCC Program Current ICC4 ...
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AC CHARACTERISTICS -- READ OPERATIONS SYMBOL DESCRIPTIONS tACC Address to Output Delay tPA Page Mode Access Time tCE CE to Output Delay tOE OE to Output Delay tDF OE High to Output Delay tOH Address to Output hold tBACC BYTE ...
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Figure 5-1. NORMAL READ TIMING WAVEFORMS Standby Power-up Vcc VIH ADDRESSES VIL VIH VIL CE VIH VIL OE VIH WE VIL VOH HIGH Z DATA OUT VOL 5.0V VCC GND NOTE: 1. For real world application, BYTE pin should be ...
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Figure 5-2. PAGE READ TIMING WAVEFORMS A3-A19 (A-1), A0~ DATA OUT Figure 6. BYTE TIMING WAVEFORMS VIH ADDRESSES VIL VIH VIL CE VIH VIL OE VIH VIL BYTE VOH HIGH Z DATA(DQ0-DQ7) VOL VOH HIGH Z DATA(DQ8-DQ15) VOL ...
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AC CHARACTERISTICS -- WRITE/ERASE/PROGRAM OPERATIONS SYMBOL DESCRIPTION tWC Write Cycle Time tAS Address Setup Time tAH Address Hold Time tDS Data Setup Time tDH Data Hold Time tOES Output Enable Setup Time tCES CE Setup Time tGHWL Read Recover TimeBefore ...
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AC CHARACTERISTICS -- WRITE/ERASE/PROGRAM OPERATIONS SYMBOL DESCRIPTION tWC Write Cycle Time tAS Address Setup Time tAH Address Hold Time tDS Data Setup Time tDH Data Hold Time tOES Output Enable Setup Time tCES CE Setup Time tGHWL Read Recover TimeBefore ...
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Figure 7. COMMAND WRITE TIMING WAVEFORMS CE tOES tCS OE WE tGHWL tAS ADDRESSES HIGH Z DATA (D/Q) VCC tVCS NOTE: 1. BYTE pin is treated as address pin All timing specifications for BYTE pin are the same as those ...
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Figure 8. AUTOMATIC PAGE PROGRAM TIMING WAVEFORMS A0~A5 55H A-1 (byte mode only) 55H A6~A14 tAS tAH A15~A19 tWC CE tWPH tWP WE OE tDS tDH DATA AAH NOTE: 1.Please refer to page 9 for detail page program operation. P/N:PM0511 ...
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Figure 9. AUTOMATIC SECTOR/CHIP ERASE TIMING WAVEFORMS A0~A14 5555H 2AAAH tAS tAH A15~A19 CE tWPH tWP WE tWC OE tDS tDH DATA AAH NOTES: 1."*" means "don't care" in this diagram. 2."SA" means "Sector Adddress". P/N:PM0511 5555H 5555H 2AAAH 55H ...
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Figure 10. SECTOR PROTECTION ALGORITHM START, PLSCNT=0 Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 60H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 20H, Sector Address* Read Status Register ...
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Figure 11. SECTOR UNPROTECT ALGORITHM START, PLSCNT=0 Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 60H Address 5555H Write Data AAH Address 5555H Write Data 55H Address 2AAAH Write Data 40H, Sector Address* Read Status Register ...
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Figure 12. VERIFY SECTOR PROTECT FLOW CHART * 1. Protect Status: Data Outputs C2H as Protected Sector Verified Code. Data Outputs 00H as Unprotected Sector Verified Code. 2. Sepecified address will be either (A19,A18,A17,A16,A15,A1,A0) = (0000010) or (1111110), the rest ...
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Figure 13. COMMAND WRITE TIMING WAVEFORMS(Alternate CE Controlled) WE tOES tWS OE CE tGHWL tAS ADDRESSES HIGH Z DATA (D/Q) VCC tVCS NOTE: 1. BYTE pin is treated as Address pin. All timing specifications for BYTE pin are the same ...
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Figure 14. AUTOMATIC PAGE PROGRAM TIMING WAVEFORM(Alternate CE Controlled) A0~A5 55H A-1 ((Byte Mode Only) 55H A6~A14 tAS tAH A15~A19 tWC WE tCP CE(1) OE tDS DATA AAH NOTE: 1.Please refer to page 9 for detail page program operation. P/N:PM0511 ...
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ERASE AND PROGRAMMING PERFORMANCE PARAMETER Chip/Sector Erase Time Page Programming Time Chip Programming Time Byte Program Time Erase/Program Cycles 1.All number are sampled, not 100% tested. 2.Typing values are measured at 25° C, VCC=3.3V LATCHUP CHARACTERISTICS Input Voltage with respect ...
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... ORDERING INFORMATION PLASTIC PACKAGE PART NO. Access Time (ns) MX29L1611MC-75 75 MX29L1611MC-90 90 MX29L1611MC-10 100 MX29L1611MC-12 120 MX29L1611TC-75 75 MX29L1611TC-90 90 MX29L1611TC-10 100 MX29L1611TC-12 120 P/N:PM0511 MX29L1611 Operating Current Standby Current MAX.(mA) MAX.(uA PACKAGE 44 Pin SOP 44 Pin SOP ...
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PACKAGE INFORMATION 44-PIN PLASTIC SOP P/N:PM0511 MX29L1611 36 REV. 2.4, NOV. 06, 2001 ...
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PLASTIC TSOP(NORMAL TYPE) P/N:PM0511 MX29L1611 37 REV. 2.4, NOV. 06, 2001 ...
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... Add MX29L1611MC-12 and MX29L1611TC-12 2.2 Add 100ns in for fast random access time Add MX29L1611- Characteristics Add MX29L1611MC-10 and MX29L1611TC-10 2.3 Modify Switching Test Waveform Vcc/ 0 ---> 2.4V/0.45V Modify Test Conditions : Input pulse levels: 0/Vcc ---> 0.45V/2.4V Reference level for measuring timing Vcc/2 -->1.5V 2 ...
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... TEL:+65-348-8385 FAX:+65-348-8096 TAIPEI OFFICE: TEL:+886-2-2509-3300 FAX:+886-2-2509-2200 ACRONIX MERICA, NC. TEL:+1-408-453-8088 FAX:+1-408-453-8488 CHICAGO OFFICE: TEL:+1-847-963-1900 FAX:+1-847-963-1909 http : //www.macronix.com C L O., TD. MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. 39 MX29L1611 ...