SDC03-V1 Allegro Micro Systems, Inc., SDC03-V1 Datasheet

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SDC03-V1

Manufacturer Part Number

SDC03-V1

Description

Manufacturer

Allegro Micro Systems, Inc.

Datasheet

1.SDC03-V1.pdf (1 pages)

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162

SDC03

Absolute maximum ratings

1

Equivalent circuit diagram

Symbol

R

V

V

V

V

R

T

I

1

P

CBO

CEO

CE

EBO

I

CP

I

T

1

: 3.5k typ R

stg

j–a

Characteristic curves

C

B

T

j

(sat)-I

R

15,16

2

2

2.5

2.0

1.5

1.0

0.5

50

10

0

5

1

I

C

3

2

1

0

0.2

0

C

1

-V

Temperature Characteristics (Typical)

I

B

3

=10mA

CE

2

1

j-a

: 200 typ

Characteristics (Typical)

2.5 (PW 1ms, D

-PW Characteristics

5

10

2

0.5

13,14

PW (mS)

V

3 (T

–40 to +150

CE

I

4

C

3

Ratings

(A)

–30 C

(V)

60 10

60 10

50

a

150

41.6

25 C

1.5

0.1

Ta=125 C

=25 C)

6

5

75 C

1

100

4

(I

C

/ I

u

B

5

=1000)

500

10%)

11,12

1000

2.5

6

6

NPN Darlington

With built-in avalanche diode

7

(T

Unit

C/W

a

W

V

V

V

A

A

A

9,10

C

C

=25 C)

8

10000

5000

1000

V

500

100

50

0.03 0.05

CE

3

2

1

0

3

2

1

0

h

0.1

0

FE

4

3

2

1

(sat)-I

Electrical characteristics

-I

C

P

Symbol

V

V

Characteristics (Typical)

T

0.5

-T

B

CE

V

BE

V

0.1

I

I

C

h

t

CBO

EBO

t

Characteristics (Typical)

a

CEO

FEC

stg

on

f

(sat)

t

FE

(sat)

0.5A

T

ob

50

f

Characteristics

1

1A

I

Ta ( C)

B

I

C

(mA)

(A)

5

0.5

10

1-1 Chip Operation

2-2 Chip Operation

3-3 Chip Operation

4-4 Chip Operation

I

C

100

=2A

2000

min

1.1

50

(V

1

CE

typ

Specification

=4V)

50 100

150

2.5

5000

typ

1.2

1.8

1.3

0.5

4.0

1.0

60

50

25

12000

max

3.5

1.4

2.2

1.8

10

70

h

I

C

FE

-V

-I

10000

External dimensions

BE

5000

1000

C

0.05

500

100

2.5

2.0

1.5

1.0

0.5

0.5

0.1

50

Temperature Characteristics (Typical)

0.03 0.05

5

1

0

Temperature Characteristics (Typical)

0

3

Single Pulse

Without Heatsink

T

Safe Operating Area (SOA)

a

Unit

MHz

=25 C

mA

pF

V

V

V

V

5

A

s

s

s

0.1

10

1

V

V

I

CE

C

BE

V

V

(A)

CE

(V)

(V)

V

CB

I

C

I

B1

Conditions

CE

=12V, I

=1A, I

0.5

=10V, f=1MHz

V

V

I

=–I

I

V

C

=4V, I

2

CC

FEC

I

CB

=10mA

C

EB

=1A,

B2

(V

=50V

1

(V

50

=6V

=1A

B

30V,

CE

CE

=2mA

=2mA

E

=4V)

C

=4V)

E

=–0.1A

=1A

(T

100

2.5

3

• • •

a

=25 C)

SD

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