IXFN61N50 IXYS Corporation, IXFN61N50 Datasheet

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IXFN61N50

Manufacturer Part Number
IXFN61N50
Description
High Current Power MOSFET
Manufacturer
IXYS Corporation
Datasheet

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High Current Power MOSFET
N-Channel Enhancement Mode
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
P
T
T
T
V
M
Weight
E
Symbol
V
V
I
I
R
I
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
©1996 IXYS Corporation. All rights reserved.
XYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
GSS
DSS
J
JM
stg
DSS
DGR
ISOL
AR
GS
GSM
D
DSS
GS(th)
d
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
50/60 Hz, RMS
Mounting torque
Terminal connection torque (M4)
Test Conditions
V
V
V
V
V
Pulse test, t
V
J
J
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C (1)
= 25°C
= 0 V, I
= V
= 20 V DC, V
= 0.8 V
= 0 V
= 10 V, I
Fax: 408-496-0670
GS
,
I
D
D
DSS
= 12 mA
D
= 5 mA
= 0.5 I
300 µs, duty cycle
DS
D25
= 0
GS
t = 1 minute
t = 1s
T
T
J
J
= 1.0 M
= 25°C
= 125°C
(T
J
= 25°C unless otherwise specified)
2 %
IXFN 58N50
IXFN 61N50
IXFN 58N50
IXFN 61N50
58N50
61N50
Min.
500
1.7
-40 ... +150
-40 ... +150
Characteristic Values
Maximum Ratings
Typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
500
500
232
244
625
150
20
30
58
61
30
75
200
500
4.0
2
Max.
85 m
75 m
IXFN 58N50 500V
IXFN 61N50 500V
mJ
mA
V~
V~
°C
°C
°C
nA
µA
W
V
V
V
V
A
A
A
A
V
V
g
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Features
• International standard package
• Isolation voltage 3000V (RMS)
• Low R
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance
• Low package inductance (< 10 nH)
• Aluminium Nitride Isolation
Applications
• DC choppers
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode
Advantages
• Easy to mount
• Space savings
• High power density
(<60 pF)
- reduced RFI
- easy to drive and to protect
- increased current ratings
power supplies
DS (on)
IXFN 58N50
IXFN 61N50
V
1 = Source
3 = Drain
DSS
HDMOS
miniBLOC, SOT-227 B
Fax: +49-6206-503629
IXYS Semiconductor
2
58A
61A
I
TM
D25
process
92810G (10/95)
1
2 = Gate
4 = Source
85 m
75 m
3
R
l
DS(on)
4

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IXFN61N50 Summary of contents

Page 1

... 0.5 I DS(on Pulse test, t 300 µs, duty cycle ©1996 IXYS Corporation. All rights reserved. XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 Maximum Ratings 500 = 1 ...

Page 2

Symbol Test Conditions 0 MHz iss oss C rss ...

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