HN29W25611T-50 Renesas Electronics Corporation., HN29W25611T-50 Datasheet

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HN29W25611T-50

Manufacturer Part Number
HN29W25611T-50
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Quantity
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Part Number:
HN29W25611T-50H
Manufacturer:
HIT
Quantity:
5 510
Description
The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29W25611 are more than 16,057 (98% of all
sector address) and less than 16,384 sectors.
Features
On-board single power supply (V
Organization
Multi-level memory cell
Automatic programming
Automatic erase
AND Flash Memory: (2048 + 64) bytes
Data register: (2048 + 64) bytes
2 bit/per memory cell
Sector program time: 3.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Single sector erase time: 1.5 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
More than 16,057-sector (271,299,072-bit)
HN29W25611 Series
256M AND type Flash Memory
CC
): V
CC
= 3.3 V 0.3 V
(More than 16,057 sectors)
ADE-203-995B (Z)
Dec. 10, 1999
Rev. 1.0

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HN29W25611T-50 Summary of contents

Page 1

HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V ...

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... A (max) (Deep standby) SB3 The following architecture is required for data reliability. Error correction: more than 3-bit error correction per each sector read Spare sectors: 1.8% (290 sectors) within usable sectors Ordering Information Type No. Available sector HN29W25611T-50 More than 16,057 sectors 2 Package 2 12.0 18.40 mm 0.5 mm pitch ...

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Pin Arrangement I/O0 4 I/O1 5 I/ ...

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HN29W25611 Series Block Diagram Sector address buffer • • I/O0 • • to Multiplexer • • I/O7 • • RDY/Busy Read/Program/Erase control Control WE signal SC buffer RES CDE 4 2048 + 64 X-decoder ...

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Memory Map and Address Sector address 3FFFH 3FFEH 3FFDH 0002H 0001H 0000H 000H Address Cycles Sector address SA (1): First cycle SA (2): Second cycle Column address CA (1): First cycle CA (2): Second cycle Notes: 1. Some failed sectors ...

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HN29W25611 Series Pin Function CE used to select the device. The status returns to the standby at the rising edge the reading operation. However, the status does not return to the standby at the rising ...

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Command Definition* Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without 7 CA* ) (With CA* 10 Program (2)* ...

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HN29W25611 Series Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without 7 CA* ) (With CA* 10 Program (2)* Program (3) ...

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Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without 7 CA* ) (With CA* 10 Program (2)* Program (3) (Control bytes)* ...

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HN29W25611 Series Mode Description Read Serial Read (1): Memory data D0 to D2111 in the sector of address SA is sequentially read. Output data is not valid after the number of the SC pulse exceeds 2112. When CA is input, ...

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Program (4): Program data PD0 to PD2111 is programmed into the sector of address SA automatically by internal control circuits. When CA is input, program data PD ( programmed from CA into the sector ...

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HN29W25611 Series Data Recovery Read When the programming was an error, the program data can be read by using data recovery read. When an additional programming was an error, the data compounded of the program data and the origin data ...

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Command/Address/Data Input Sequence Serial Read (1) (With CA before SC) Command 00H SA (1) SA (2) /Address CDE WE Low SC Serial Read (1) (With CA after SC) Command 00H SA (1) SA (2) /Address CDE WE Low SC Data ...

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HN29W25611 Series Program (1), (4) (With CA before SC) Command 10H/11H SA (1) SA (2) /Address CDE WE Low SC Program (1), (4) (With CA after SC) Command 10H/11H SA (1) SA (2) /Address CDE WE Low SC Data input ...

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Program (3) Command/Address 0FH CDE WE SC Low ID Read Mode Command/Address CDE WE SC Low Data Recovery Read Mode Command/Address Data Recovery Write Mode Command/Address CDE (1) SA (2) Data input 90H Manufacture Device code code ...

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HN29W25611 Series Status Transition V Deep CC Power off standby RES 00H/F0H Read (1) / (2) setup FFH CE 90H ID read setup FFH CE 20H Sector Erase setup FFH 10H CE Output /11H Program Standby disable (1)/(4) setup FFH ...

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Absolute Maximum Ratings Parameter V voltage CC V voltage SS All input and output voltages Operating temperature range Storage temperature range Storage temperature under bias Notes: 1. Relative Vin, Vout = –2.0 V for pulse ...

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HN29W25611 Series DC Characteristics (V = 3 +70˚C) CC Parameter Symbol Min Input leakage current I LI Output leakage current I LO Standby V current I CC SB1 I SB2 Deep standby V ...

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Power on and off, Serial Read Mode Parameter Symbol Write cycle time t CWC Serial clock cycle time t SCC CE setup time t CES CE hold time t CEH Write pulse time t WP Write pulse high time t ...

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HN29W25611 Series Parameter Symbol SC setup for hold time for OE t COH SA ( (2) delay time t SCD RDY/Busy setup for Time to device busy on read t DBR ...

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Program, Erase and Erase Verify Parameter Symbol Write cycle time t CWC Serial clock cycle time t SCC CE setup time t CES CE hold time t CEH Write pulse time t WP Write pulse high time t WPH Address ...

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HN29W25611 Series Parameter Symbol OE to output delay high to output float t DF RES to WE setup time t RP CDE setup time for WE t CDS CDE hold time for WE t CDH CDE setup ...

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Timing Waveforms Power on and off Sequence VRS CES WE t CWRS RES BSY RDY /Busy Notes: 1. RES must be kept at the V ILR to guarantee data stored ...

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HN29W25611 Series Serial Read (1) (2) Timing Waveform CE t CES CWC CWC WPH WPH OEWS WE t CDS CDS CDE t CDH ...

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Serial Read (1) with CA after SC Timing Waveform CE t CES CWC CWC WPH WPH OER OEWS CDE CDH OES t t SCC ...

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HN29W25611 Series Program (1) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS WP CDS WP WP CDE t CDH SC t ...

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Program (1) with CA before SC and Status Data Polling Timing Waveform CE t CES CWC CWC CWC CWC OEWS WPH WPH WPH WPH ...

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HN29W25611 Series Program (2) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS WP CDS WP WP CDE t CDH SC t ...

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Program (3) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t WPH CDS CDS CDE t CDH ...

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HN29W25611 Series Program (4) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS CDS WP WP CDE t CDH SC t ...

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Program (4) with CA before SC and Status Data Polling Timing Waveform CE t CES CWC CWC CWC CWC OEWS WPH WPH WPH WPH ...

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HN29W25611 Series ID and Status Register Read Timing Waveform CE t CES OEWS OEPS CDH CDS WP CDE t SCHW SCS DS OE I/O0 to I/O7 Manufacturer ...

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Data Recovery Read Timing Waveform CE t CES OEWS OER CDH t CDS WP CDE t OES t WSDR SCS OEL I/O0 to I/O7 ...

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HN29W25611 Series Data Recovery Write Timing Waveform CE t CES CWC CWC WPH WPH OEWS WE t CDS CDS CDE t CDH ...

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Clear Status Register Timing Waveform CE t CES OE t OEWS CDH WP CDE t CDS SC t SCS I/O0 to I/O7 50H RES High High-Z RDY /Busy Note 1. The status returns ...

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HN29W25611 Series Function Description Status Register: The HN29W25611 outputs the operation status data as follows: I/O7 pin outputs a V indicate that the memory is in either erase or program operation. The level of I/O7 pin turns ...

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Unusable Sector Initially, the HN29W25611 includes unusable sectors. The unusable sectors must be distinguished from the usable sectors by the system as follows. 1. Check the partial invalid sectors in the devices on the system. The usable sectors were programmed ...

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HN29W25611 Series Requirements for High System Reliability The device may fail during a program, erase or read operation due to write or erase cycles. The following architecture will enable high system reliability if a failure occurs. 1. For an error ...

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START Program start Set an usable sector Program end Check RDY/Busy No Check status Yes Clear status register Load data from external buffer Check status: Status register read END Spare Sectors in Program Error HN29W25611 Series Data recovery read Data ...

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HN29W25611 Series Memory Structure 2,112 bytes (16,896 bits) Bit: Minimum unit of data. Byte: Input/output data unit in programming and reading. (1 byte = 8 bits) Sector: Page unit in erase, programming and reading. (1 sector = 2,112 bytes = ...

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... Package Dimensions HN29W25611T Series (TFP-48D) 12.00 12.40 Max 0.50 *0.22 0.08 0.08 M 0.20 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 25 20.00 0.20 Hitachi Code JEDEC EIAJ Weight (reference value) HN29W25611 Series Unit: mm 0.80 0 – 5 0.50 0.10 TFP-48D Conforms Conforms 0. ...

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HN29W25611 Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that ...

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Revision Record Rev. Date Contents of Modification 0.0 Jan. 8, 1999 Initial issue 0.1 Jun. 28, 1999 Deletion Sector program time: 1 3.0 ms Single sector erase time: 1 1.5 ms Error correction: ...

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