TDA8580J Philips Semiconductors, TDA8580J Datasheet
TDA8580J
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TDA8580J Summary of contents
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... DATA SHEET TDA8580J Multi-purpose power amplifier Preliminary specification Supersedes data of 1998 Feb 25 File under Integrated Circuits, IC01 INTEGRATED CIRCUITS 2000 Apr 18 ...
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... ESD protected on all pins Thermal protection against temperatures exceeding 150 C. GENERAL DESCRIPTION The TDA8580J is a stereo Bridge-Tied Load (BTL quad Single-Ended (SE) amplifier that operates over a wide supply voltage range from This makes it suitable for applications such as television, home-sound systems and active speakers ...
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... 14.4 V; mute condition 14 condition 14 kHz mute i ripple(p-p) condition Preliminary specification TDA8580J MIN. TYP. MAX. UNIT 8.0 14 140 170 0.05 0.1 % ...
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... TDA8580J BUFFER INTERFACE PGND1 Fig.1 Block diagram. 4 Preliminary specification V/I 1 OUT1 OA 4 OUT2 OA V BUFFER 45 BUFFER V/I 14 OUT3 OUT4 V DIAGNOSTIC DIAG 2 16 MGE010 PGND2 TDA8580J ...
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... P2 PGND2 16 power ground 2 OUT4+ 17 non-inverting output 4 2000 Apr 18 handbook, halfpage 1 OUT1 2 PGND1 OUT2 5 STANDBY DIAG 6 7 IN1 8 IN2 TDA8580J 9 BUFFER 10 IN3 11 IN4 12 IN5 13 MUTE OUT3 PGND2 17 OUT4 Fig.2 Pin configuration. 5 Preliminary specification TDA8580J MGE009 ...
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... Philips Semiconductors Multi-purpose power amplifier FUNCTIONAL DESCRIPTION The TDA8580J is a multi-purpose power amplifier with four amplifiers which can be connected in the following configurations with high output power and low distortion (at minimum quiescent current): Dual bridge-tied load amplifiers Quad single-ended amplifiers Dual single-ended amplifiers and one bridge-tied load amplifier ...
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... kHz THD = 0.5 14 THD = 0.5 THD = 10 14 THD = 10 o(rms) 7 Preliminary specification TDA8580J MIN. TYP. MAX. 8.0 14.4 24 140 170 1 50 7.0 6.0 7.0 8.0 4.0 0 0.8 0.2 2.0 5.3 8 0.8 2.5 5.3 0.2 0 145 = 4 ...
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... V = 14.4 V; note note i(rms kHz ripple(p-p) mute condition 0 kHz i(rms Preliminary specification TDA8580J MIN. TYP. MAX. UNIT 140 100 150 500 V ...
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... Apr 18 VOLTAGE AT PIN MUTE don’t care < 0.8 V 2.5 to 5.3 V don’t care handbook, halfpage DIAG amplifier output MGE020 Fig.4 Diagnostic waveform: DDD function. 9 Preliminary specification TDA8580J FUNCTION standby (off) mute (DC settled) on (AC operating) on (AC operating) active normal DDD normal MGE021 ...
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... P o Fig.6 MGS701 1 handbook, halfpage THD (%) (Hz Fig.8 10 Preliminary specification TDA8580J ( channel driven Total harmonic distortion as a function of frequency; BTL mode 14.4 V ...
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... V; 2 channel driven kHz kHz 100 Hz. i output power; BTL mode ( ( channel driven kHz kHz 100 Hz. i output power; SE mode. TDA8580J MGS704 ( (W) MGS706 (2) (1) (3) 10 ...
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... R i Fig.16 Power dissipation as a function of output 12 Preliminary specification 14 channel driven power; BTL mode 14 channel driven power; SE mode. TDA8580J MGS708 (W) MGS710 (W) ...
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... kHz (1) THD = 0.5%. (2) THD = 10% Fig.20 Output power as a function of supply 13 Preliminary specification TDA8580J ( channel driven. L voltage; BTL mode. ( channel driven. L voltage; SE mode. ...
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... (1) Channels 3 and 4 to channels 1 and 2. (2) Channels 1 and 2 to channels 3 and 4. Fig.24 Channel separation as a function of 14 Preliminary specification TDA8580J 14 frequency; BTL mode. (1) ( ...
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... MGS719 20 handbook, halfpage SVRR (dB ( Fig.26 SVRR as a function of frequency; MGS721 (Hz) 15 Preliminary specification TDA8580J (1) ( ripple(p- BTL mode. MGS720 (Hz) ...
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... C1. wire when a connected amplifier is driven by a signal. Optimize the THD performance The TDA8580J application can be optimized to gain the lowest THD possible by applying the following guidelines Hz. > 18 V): ...
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... L Measured worst case P T j(max) T amb(max th(j- 150 60 = --------------------- - 1.5 32 Table 3 Heatsink thermal resistance as a function of is th(j- Preliminary specification TDA8580J BTL) (sine wave 150 1.5 K – j max amb max ------------------------------------------------- - R = – – – ...
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... Fig.28 Stereo bridge-tied load application Preliminary specification 1000 F 100 nF 16/ V/I 1 OUT1 OA OUT2 BUFFER 45 BUFFER V/I 14 OUT3 OA 17 OUT4 OA V DIAG DIAGNOSTIC 2 16 PGND2 MGU075 TDA8580J ...
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... BUFFER V/I k INTERFACE 2 PGND1 applied; the value of R1 and R2 connected in parallel should be minimum Fig.29 Quad single-ended application Preliminary specification TDA8580J V P 1000 F 100 nF 16/ OUT1 OA OUT2 BUFFER BUFFER ...
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... V BUFFER V/I k INTERFACE 2 PGND1 applied; the value of R1 and R2 connected in parallel should be minimum Preliminary specification TDA8580J V P 1000 F 100 nF 16/ OUT1 OA 4 OUT2 BUFFER 9 BUFFER 45 k OUT3 OUT4 ...
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... R1 and R2 connected in parallel should be minimum Preliminary specification V P2 OUT1 1 OUT2 4 OUT3 (1) 14 OUT4 17 (2) 2 BUFFER 9 220 DIAG MGS699 PGND2 18 V; 1-pin and 2-pin operation OUT1 1 OUT2 4 OUT3 (1) 14 OUT4 17 (2) 2 BUFFER 9 220 nF DIAG 6 PGND2 MGS697 24 V; 1-pin operation. P TDA8580J (2) (2) ...
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... and one BTL ( and 11 0 Preliminary specification OUT1 1 OUT2 4 OUT3 (1) 14 OUT4 17 (2) 2 BUFFER 9 220 nF MUTE 13 DIAG 4.7 F MUTE MGS698 24 V; 2-pin operation. P EQUIVALENT CIRCUIT V int V int 12 MGS723 14, and 17 MGL849 TDA8580J (2) ...
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... Philips Semiconductors Multi-purpose power amplifier PIN NAME 5 STANDBY 13 MUTE 6 DIAG 2000 Apr 18 EQUIVALENT CIRCUIT MGL848 V int MGS724 6 MGS722 23 Preliminary specification TDA8580J ...
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... 20.0 12.2 10 2.54 1.27 5.08 19.6 11.8 REFERENCES JEDEC EIAJ 24 Preliminary specification non-concave view B: mounting base side 3.4 12.4 2.4 2.1 6 4.3 3.1 11.0 1.6 1.8 EUROPEAN PROJECTION TDA8580J SOT243 ( 2.00 0.8 0.4 0.03 1.45 ISSUE DATE 97-12-16 99-12-17 ...
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... If the temperature of the soldering iron bit is less than 300 C it may remain in contact for seconds. If the bit temperature is between 300 and 400 C, contact may seconds. SOLDERING METHOD DIPPING suitable 25 Preliminary specification TDA8580J ). If the stg(max) WAVE (1) suitable ...
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... Preliminary specification TDA8580J (1) These products are not Philips Semiconductors ...
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... Philips Semiconductors Multi-purpose power amplifier 2000 Apr 18 NOTES 27 Preliminary specification TDA8580J ...
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... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...